IRFB3207ZPBF

Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching G Hard Switched and High Frequency Circuits Benefits Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free RoHS Compliant, Halogen-Free IRFB3207ZPbF IRFS3207ZPbF IRFSL3207ZPbF HEXFET® Power MOSFET D VDSS RDS(on) typ. max. 75V 3.3mΩ 4.1mΩ ID (Silicon Limited) 170A S ID (Package Limited) 120A D D D S D G TO-220AB IRFB3207ZPbF G Gate S G D2Pak IRFS3207ZPbF S D G TO-262 IRFSL3207ZPbF D Drain S Source Base Part Number IRFB3207ZPbF IRFSL3207ZPbF IRFS3207ZPbF Package Type TO-220 TO-262 D2Pak Standard Pack Form Tube Tube Tube Tape and Reel Left Tape and Reel Right Quantity 50 50 50 800 800 Orderable Part Number IRFB3207ZPbF IRFSL3207ZPbF IRFS3207ZPbF IRFS3207ZTRLPbF IRFS3207ZTRRPbF Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage Peak Diode Recovery TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalan...