STP20NM60A

STB20NM60A-1 STP20NM60A - STF20NM60A N-CHANNEL 650V@Tjmax - 0.25Ω - 20A I²PAK/TO-220/TO-220FP MDmesh™ MOSFET TYPE STB20NM60A-1 STP20NM60A STF20NM60A s s s s VDSS @Tjmax 650 V 650 V 650 V RDS(on) < 0.29 Ω < 0.29 Ω < 0.29 Ω ID 20 A 20 A 20 A 3 TYPICAL RDS(on) = 0.25Ω HIGH dv/dt LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE 3 12 1 2 I²PAK TO-220 3 1 2 DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that ofwww.DataSheet4U.com similar competition’s products. TO-220FP INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s SPECIFICALLY DESIGNED FOR ADAPTORS IN QUASI-RESONANT CONFIGURATION ORDER CODES PART NUMBER STB20NM60A-1 STP20NM60A STF20NM60A MARKING B20NM60A P20NM60A F20NM60A PACKAGE I2PAK TO-220 TO-220FP PACKAGING TUBE TUBE TUBE March 2004 1/12 STB20NM60A-1/STP20NM60A/STF20NM60A ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STB20NM60A-1 STP20NM60A VGS ID ID IDM ( ) PTOT dv/dt (1) VISO Tstg Tj Gate-source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Ins...