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STF20NM60D Dataheets PDF



Part Number STF20NM60D
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description N-CHANNEL MOSFET
Datasheet STF20NM60D DatasheetSTF20NM60D Datasheet (PDF)

STF20NM60D - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh™ Power MOSFET (with fast diode) General features Type STF20NM60D STP20NM60FD STW20NM60FD ■ ■ ■ ■ ■ VDSS 600V 600V 600V RDS(on) <0.29Ω <0.29Ω <0.29Ω ID 20A 20A 20A Pw 192W 45W 214W TO-247 3 1 2 TO-220FP High dv/dt and avalanche capabilities 100% Avalanche tested Low input capacitance and gate charge 1 3 2 Low gate input resistancE Tight process control and high manufacturing yields TO-220.

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STF20NM60D - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh™ Power MOSFET (with fast diode) General features Type STF20NM60D STP20NM60FD STW20NM60FD ■ ■ ■ ■ ■ VDSS 600V 600V 600V RDS(on) <0.29Ω <0.29Ω <0.29Ω ID 20A 20A 20A Pw 192W 45W 214W TO-247 3 1 2 TO-220FP High dv/dt and avalanche capabilities 100% Avalanche tested Low input capacitance and gate charge 1 3 2 Low gate input resistancE Tight process control and high manufacturing yields TO-220 Internal schematic diagram Description The FDmesh™ associates all advantages of www.DataSheet4U.com reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. Applications ■ Switching application Order codes Part number STF20NM60D STP20NM60FD STW20NM60FD Marking F20NM60D P20NM60FD W20NM60FD Package TO-220FP TO-220 TO-247 Packaging Tube Tube Tube August 2006 Rev 4 1/15 www.st.com 15 Contents STF20NM60D - STP20NM60FD - STW20NM60FD Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 STF20NM60D - STP20NM60FD - STW20NM60FD Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VDGR VGS ID ID IDM (2) Absolute maximum ratings Value Parameter TO-220 Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 kΩ) Gate- source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating factor 20 12.6 80 192 1.20 TO-220FP 600 600 ± 30 20 (1) (1) Unit TO-247 V V V 20 12.6 80 214 1.42 A A A W W/°C V/ns V °C °C 12.6 80 (1) PTOT (3) 45 0.36 20 dv/dt Peak diode recovery voltage slope Insulation withstand voltage (DC) Operating junction temperature Storage temperature - VISO Tj Tstg 2500 – 65 to 150 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD < 20A, di/dt < 400A/µs, VDD = 80%V(BR)DSS Table 2. Symbol Thermal resistance Value Parameter TO-220 TO-220FP 2.8 62.5 300 TO-247 0.585 30 °C/W °C/W °C 0.65 Unit Rthj-case Thermal resistance junction-case Max Rthj-amb Thermal resistance junction-ambient Max Tl Maximum lead temperature for soldering purpose Table 3. Symbol IAR EAS Avalanche data Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 35 V) Value 10 700 Unit A mJ 3/15 Electrical characteristics STF20NM60D - STP20NM60FD - STW20NM60FD 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250µA, VGS = 0 VDS = Max rating VDS = Max rating, TC = 125 °C VGS = ±30V VDS = VGS, ID = 250µA VGS = 10V, ID = 10A 3 4 Min 600 1 10 ±10 0 5 Typ Max Unit V µA µA µA V Ω 0.26 0.29 Table 5. Symbol gfs (1) Ciss Coss Crss Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Test conditions VDS > ID(on) x RDS(on)max, ID = 10A VDS = 25V, f = 1 MHz, VGS = 0 Min Typ Max Unit 9 1300 500 35 190 2.7 37 10 17 S pF pF pF pF Ω nC nC nC Coss eq. (2) Equivalent output capacitance VGS = 0V, VDS = 0V to 480V RG Qg Qgs Qgd Gate input resistance Total gate charge Gate-source charge Gate-drain charge f=1 MHz Gate DC Bias = 0 Test signal level = 20mV open drain VDD = 480V, ID = 20A, VGS = 10V (see Figure 17) 52 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% 4/15 STF20NM60D - STP20NM60FD - STW20NM60FD Table 6. Symbol td(on) tr tr(Voff) tf tc Electrical characteristics Switching times Parameter Turn-on delay time Rise time Off-voltage rise time Fall time Cross-over time Test conditions VDD = 300V, ID = 10A RG = 4.7Ω VGS = 10V (see Figure 16) VDD = 480 V, ID = 20A, RG = 4.7Ω, VGS = 10V (see Figure 16) Min. Typ. 25 12 8 22 30 Max. Unit ns ns ns ns ns Table 7. Symbol ISD ISDM (1) Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Revers.


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