Document
STF20NM60D - STP20NM60FD STW20NM60FD
N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh™ Power MOSFET (with fast diode)
General features
Type STF20NM60D STP20NM60FD STW20NM60FD
■ ■ ■ ■ ■
VDSS 600V 600V 600V
RDS(on) <0.29Ω <0.29Ω <0.29Ω
ID 20A 20A 20A
Pw 192W 45W 214W TO-247
3 1 2
TO-220FP
High dv/dt and avalanche capabilities 100% Avalanche tested Low input capacitance and gate charge
1 3 2
Low gate input resistancE Tight process control and high manufacturing yields
TO-220
Internal schematic diagram Description
The FDmesh™ associates all advantages of www.DataSheet4U.com reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
Applications
■
Switching application
Order codes
Part number STF20NM60D STP20NM60FD STW20NM60FD Marking F20NM60D P20NM60FD W20NM60FD Package TO-220FP TO-220 TO-247 Packaging Tube Tube Tube
August 2006
Rev 4
1/15
www.st.com 15
Contents
STF20NM60D - STP20NM60FD - STW20NM60FD
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 4 5
Test circuit
................................................ 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
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STF20NM60D - STP20NM60FD - STW20NM60FD
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VDGR VGS ID ID IDM
(2)
Absolute maximum ratings
Value Parameter TO-220 Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 kΩ) Gate- source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating factor 20 12.6 80 192 1.20 TO-220FP 600 600 ± 30 20
(1) (1)
Unit TO-247 V V V 20 12.6 80 214 1.42 A A A W W/°C V/ns V °C °C
12.6 80
(1)
PTOT
(3)
45 0.36 20
dv/dt
Peak diode recovery voltage slope Insulation withstand voltage (DC) Operating junction temperature Storage temperature -
VISO Tj Tstg
2500 – 65 to 150
1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD < 20A, di/dt < 400A/µs, VDD = 80%V(BR)DSS
Table 2.
Symbol
Thermal resistance
Value Parameter TO-220 TO-220FP 2.8 62.5 300 TO-247 0.585 30 °C/W °C/W °C 0.65 Unit
Rthj-case Thermal resistance junction-case Max Rthj-amb Thermal resistance junction-ambient Max Tl Maximum lead temperature for soldering purpose
Table 3.
Symbol IAR EAS
Avalanche data
Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 35 V) Value 10 700 Unit A mJ
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Electrical characteristics
STF20NM60D - STP20NM60FD - STW20NM60FD
2
Electrical characteristics
(TCASE=25°C unless otherwise specified) Table 4.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250µA, VGS = 0 VDS = Max rating VDS = Max rating, TC = 125 °C VGS = ±30V VDS = VGS, ID = 250µA VGS = 10V, ID = 10A 3 4 Min 600 1 10 ±10 0 5 Typ Max Unit V µA µA µA V Ω
0.26 0.29
Table 5.
Symbol gfs (1) Ciss Coss Crss
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Test conditions VDS > ID(on) x RDS(on)max, ID = 10A VDS = 25V, f = 1 MHz, VGS = 0 Min Typ Max Unit 9 1300 500 35 190 2.7 37 10 17 S pF pF pF pF Ω nC nC nC
Coss eq. (2) Equivalent output capacitance VGS = 0V, VDS = 0V to 480V RG Qg Qgs Qgd Gate input resistance Total gate charge Gate-source charge Gate-drain charge f=1 MHz Gate DC Bias = 0 Test signal level = 20mV open drain VDD = 480V, ID = 20A, VGS = 10V (see Figure 17)
52
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
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STF20NM60D - STP20NM60FD - STW20NM60FD Table 6.
Symbol td(on) tr tr(Voff) tf tc
Electrical characteristics
Switching times
Parameter Turn-on delay time Rise time Off-voltage rise time Fall time Cross-over time Test conditions VDD = 300V, ID = 10A RG = 4.7Ω VGS = 10V (see Figure 16) VDD = 480 V, ID = 20A, RG = 4.7Ω, VGS = 10V (see Figure 16) Min. Typ. 25 12 8 22 30 Max. Unit ns ns ns ns ns
Table 7.
Symbol ISD ISDM
(1)
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Revers.