STS15N4LLF3

STS15N4LLF3 N-channel 40V - 0.0042Ω - 15A - SO-8 STripFET™ Power MOSFET General features Type STS15N4LLF3 ■ ■ ■ VDSS 40V RDS(on) <0.005Ω ID 15A Optimal RDS(on)x Qg trade-off @ 4.5V Conduction losses reduced Switching losses reduced SO-8 Description This N-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™“ strip-based process with less critical aligment steps and therefore a remarkable manufacturing Internal reproducibility. The resulting transistor shows extremely high packing density for low onwww.DataSheet4U.com resistance, rugged avalanche characteristics and low gate charge. schematic diagram Applications ■ Switching application Order codes Part number STS15N4LLF3 Marking 15N4LLPackage SO-8 Packaging Tape & reel November 2006 Rev 2 1/12 www.st.com 12 Contents STS15N4LLF3 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 Test circuit ................................................ 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STS15N4LLF3 Electrical ratings 1 Table 1. Symbol VDS...