STS9NF30L

® STS9NF30L N-CHANNEL 30V - 0.015 Ω - 9A SO-8 LOW GATE CHARGE STripFET™ POWER MOSFET PRELIMINARY DATA TYPE STS9NF 30L s s s s s V DSS 30 V R DS(on) < 0.020 Ω ID 9 A TYPICAL RDS(on) = 0.018 Ω @ 4.5V TYPICAL Qg = 9 nC @ 4.5V OPTIMAL RDS(on) x Qg TRADE-OFF CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED DESCRIPTION This application specific Power Mosfet is the third generation of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulSO-8 ting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for INTERNAL SCHEMATIC DIAGRAM motherboards where fast switching and high effiwww.DataSheet4U.com ciency are of paramount importance. APPLICATIONS s SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS FOR MOBILE PCs ABSOLUTE MAXIMUM RATINGS Symb ol V DS V DGR V GS ID Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 C o o Value 30 30 ± 20 9 5.6 36 2.5 Un it V V V A A A W I DM ( ) P tot () Pulse width limited by safe operating area May 2000 1/6 STS9NF30L THERMAL DATA R thj -amb Tj T s tg (*)Thermal Resistance Junction-ambient Maximum Operating Junction T e...