N-CHANNEL 30V - 0.016 Ω - 9A SO-8 LOW GATE CHARGE STripFET™ II POWER MOSFET
TYPE STS9NF3LL
s s s s
STS9NF3LL
VDSS 30 V...
N-CHANNEL 30V - 0.016 Ω - 9A SO-8 LOW GATE CHARGE STripFET™ II POWER MOSFET
TYPE STS9NF3LL
s s s s
STS9NF3LL
VDSS 30 V
RDS(on) <0.019 Ω
ID 9A
TYPICAL RDS(on) = 0.016 Ω OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED
DESCRIPTION
This application specific Power MOSFET is the second generation of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting
transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck
regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.
SO-8
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s SPECIFICALLY DESIGNED AND OPTIMISED www.DataSheet4U.com FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS FOR MOBILE PCS
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM() Ptot Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Value 30 30 ± 16 9 5.6 36 2.5 Unit V V V A A A W
() Pulse width limited by safe operating area. November 2001
.
1/8
STS9NF3LL
THERMAL DATA
Rthj-amb Tj Tstg
(*)Thermal
Resistance Junction-ambient Maximum Operating Junction Temperature Storage Temperature
Max
50 150 -55 to 150
°C/W °C °C
...