MC33153

MC33153 Single IGBT Gate Driver The MC33153 is specifically designed as an IGBT driver for high power applications that include ac induction motor control, brushless dc motor control and uninterruptable power supplies. Although designed for driving discrete and module IGBTs, this device offers a cost effective solution for driving power MOSFETs and Bipolar Transistors. Device protection features include the choice of desaturation or overcurrent sensing and undervoltage detection. These devices are available in dual−in−line and surface mount packages. Features High Current Output Stage: 1.0 A Source/2.0 A Sink Protection Circuits for Both Conventional and Sense IGBTs Programmable Fault Blanking Time Protection against Overcurrent and Short Circuit Undervoltage Lockout Optimized for IGBT’s Negative Gate Drive Capability Cost Effectively Drives Power MOSFETs and Bipolar Transistors This is a Pb−Free and Halide−Free Device VCC Fault Output 7 VEE Short Circuit Latch S Q R Overcurrent Latch S Q R VCC VCC 6 VCC Short Circuit Comparator Overcurrent Comparator 130 mV 65 mV VCC 270 mA Fault Blanking/ Desaturation Comparator 6.5 V VCC Current Sense 1 Input VEE Kelvin VCC 2 GND Fault 8 Blanking/ Desaturation VEE Input VCC Output Stage http://onsemi.com MARKING DIAGRAMS 8 SOIC−8 33153 D SUFFIX ALYW 1 CASE 751 G 1 8 PDIP−8 P SUFFIX CASE 626 MC33153P AWL YYWWG 11 A = Assembly Location L, WL = Wafer Lot Y, YY = Year W, WW = Work Week G or G = Pb−...