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MMVL3700T1 Dataheets PDF



Part Number MMVL3700T1
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description High Voltage Silicon Pin Diode
Datasheet MMVL3700T1 DatasheetMMVL3700T1 Datasheet (PDF)

MMVL3700T1 High Voltage Silicon Pin Diode These devices are designed primarily for VHF band switching applications but are also suitable for use in general−purpose switching circuits. They are supplied in a cost−effective plastic surface mount package for economical, high−volume consumer and industrial requirements. Features http://onsemi.com SILICON PIN SWITCHING DIODE 1 CATHODE 2 ANODE • Long Reverse Recovery Time: trr = 300 ns (Typ) • Rugged PIN Structure Coupled with Wirebond Construction .

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MMVL3700T1 High Voltage Silicon Pin Diode These devices are designed primarily for VHF band switching applications but are also suitable for use in general−purpose switching circuits. They are supplied in a cost−effective plastic surface mount package for economical, high−volume consumer and industrial requirements. Features http://onsemi.com SILICON PIN SWITCHING DIODE 1 CATHODE 2 ANODE • Long Reverse Recovery Time: trr = 300 ns (Typ) • Rugged PIN Structure Coupled with Wirebond Construction • Low Series Resistance @ 100 MHz: for Optimum Reliability RS = 0.7 W (Typ) @ IF = 10 mAdc • Reverse Breakdown Voltage = 200 V (Min) • Pb−Free Package is Available MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Symbol VR IF Value 200 Unit Vdc 2 1 PLASTIC SOD−323 CASE 477 STYLE 1 20 mAdc www.DataSheet4U.com MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, TA = 25°C (Note 1) Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD 200 1.57 RqJA TJ, Tstg 635 150 mW mW/°C °C/W °C 4R = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. Max Unit 4R M G G Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−4 Minimum Pad ORDERING INFORMATION Device MMVL3700T1 MMVL3700T1G Package SOD−323 SOD−323 (Pb−Free) Shipping † 3000/Tape & Reel 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 1 February, 2006 − Rev. 2 Publication Order Number: MMVL3700T1/D MMVL3700T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 mAdc) Diode Capacitance (VR = 20 Vdc, f = 1.0 MHz) Series Resistance (IF = 10 mAdc) Reverse Leakage Current (VR = 150 Vdc) Reverse Recovery Time (IF = IR = 10 mAdc) Symbol V(BR)R CT RS IR trr Min 200 − − − − Typ − − 0.7 − 300 Max − 1.0 1.0 0.1 − Unit Vdc pF W mAdc ns TYPICAL CHARACTERISTICS 3.2 RS , SERIES RESISTANCE (OHMS) TA = 25°C I F , FORWARD CURRENT (mA) 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 0 2.0 4.0 6.0 8.0 10 12 14 16 800 700 600 500 400 300 200 100 0 0.7 0.8 0.9 1.0 TA = 25°C IF, FORWARD CURRENT (mA) VF, FORWARD VOLTAGE (VOLTS) Figure 1. Series Resistance 10 8.0 6.0 4.0 2.0 1.0 0.8 0.6 0.4 0.2 0.1 TA = 25°C 100 40 I R , REVERSE CURRENT (μ A) 10 4.0 1.0 0.4 0.1 0.04 0.01 Figure 2. Forward Voltage C T , DIODE CAPACITANCE (pF) VR = 15 Vdc 0.004 0 −10 −20 −30 −40 −50 0.001 −60 −20 0 +20 +60 +100 +140 VR, REVERSE VOLTAGE (VOLTS) TA, AMBIENT TEMPERATURE (°C) Figure 3. Diode Capacitance Figure 4. Leakage Current http://onsemi.com 2 MMVL3700T1 PACKAGE DIMENSIONS SOD−323 CASE 477−02 ISSUE G HE D b 1 2 E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 L 0.08 HE 2.30 2.50 2.70 STYLE 1: PIN 1. CATHODE 2. ANODE INCHES NOM MAX 0.035 0.040 0.002 0.004 0.006 REF 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 A3 A L NOTE 5 MIN 0.031 0.000 C NOTE 3 A1 SOLDERING FOOTPRINT* 0.63 0.025 0.83 0.033 1.60 0.063 2.85 0.112 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not.


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