Document
MPSW45, MPSW45A
MPSW45A is a Preferred Device
One Watt Darlington Transistors
NPN Silicon
Features http://onsemi.com
COLLECTOR 3 BASE 2 Symbol MPSW45 MPSW45 VCES VCBO VEBO IC PD PD TJ, Tstg Value 40 50 50 60 12 1.0 1.0 8.0 2.5 20 Unit Vdc Vdc Vdc Adc W mW/°C W mW/°C 1 2 3 TO−92 (TO−226) CASE 29−10 STYLE 1 EMITTER 1
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Collector −Emitter Voltage MPSW45A Collector −Base Voltage MPSW45A Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range
MARKING DIAGRAM
−55 towww.DataSheet4U.com +150 °C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 125 50 Unit °C/W °C/W MPS W45x AYWW G G
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. MPSW45x = Device Code x = 45A Devices A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Preferred devices are recommended choices for future use and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1
February, 2006 − Rev. 3
Publication Order Number: MPSW45/D
MPSW45, MPSW45A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Collector −Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 40 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 200 mAdc, VCE = 5.0 Vdc) (IC = 500 mAdc, VCE = 5.0 Vdc) (IC = 1.0 Adc, VCE = 5.0 Vdc) Collector −Emitter Saturation Voltage (IC = 1.0 Adc, IB = 2.0 mAdc) Base− Emitter Saturation Voltage (IC = 1.0 Adc, IB = 2.0 mAdc) Base −Emitter On Voltage (IC = 1.0 Adc, VCE = 5.0 Vdc) SMALL− SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 200 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Collector−Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. fT Ccb 100 − − 6.0 MHz pF hFE 25,000 15,000 4,000 VCE(sat) VBE(sat) VBE(on) − − − 150,000 − − 1.5 2.0 2.0 Vdc Vdc Vdc − MPSW45 MPSW45A IEBO V(BR)CES MPSW45 MPSW45A V(BR)CBO MPSW45 MPSW45A V(BR)EBO ICBO − − − 100 100 100 nAdc 50 60 12 − − − Vdc nAdc 40 50 − − Vdc Vdc Symbol Min Max Unit
RS
in en
IDEAL TRANSISTOR
Figure 1. Transistor Noise Model
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MPSW45, MPSW45A
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
500 200 100 10 mA 50 100 mA 20 IC = 1.0 mA 10 5.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k 2.0 BANDWIDTH = 1.0 Hz i n, NOISE CURRENT (pA) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) 100 mA 10 mA
BANDWIDTH = 1.0 Hz RS ≈ 0
en, NOISE VOLTAGE (nV)
IC = 1.0 mA
Figure 2. Noise Voltage
Figure 3. Noise Current
VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)
200 BANDWIDTH = 10 Hz TO 15.7 kHz IC = 10 mA
14 BANDWIDTH = 10 Hz TO 15.7 kHz 12 NF, NOISE FIGURE (dB)
100 70 50 30 20
10 10 mA 8.0 6.0 4.0 2.0 IC = 1.0 mA 100 mA
100 mA
1.0 mA 10
1.0
2.0
5.0
10 20 50 100 200 RS, SOURCE RESISTANCE (kΩ)
500
1000
0 1.0
2.0
5.0
10 20 50 100 200 RS, SOURCE RESISTANCE (kΩ)
500
1000
Figure 4. Total Wideband Noise Voltage
Figure 5. Wideband Noise Figure
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MPSW45, MPSW45A
SMALL−SIGNAL CHARACTERISTICS
20 TJ = 25°C |h fe |, SMALL−SIGNAL CURRENT GAIN 4.0 VCE = 5.0 V f = 100 MHz TJ = 25°C
C, CAPACITANCE (pF)
10 7.0 5.0
2.0
Cibo Cobo
1.0 0.8 0.6 0.4
3.0
2.0 0.04
0.1
0.2 0.4 1.0 2.0 4.0 10 VR, REVERSE VOLTAGE (VOLTS)
20
40
0.2 0.5
1.0
2.0
0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA)
500
Figure 6. Capacitance
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 7. High Frequency Current Gain
200 k 100 k 70 k 50 k 30 k 20 k 10 k 7.0 k 5.0 k 3.0 k
TJ = 125°C
3.0 TJ = 25°C 2.5 IC = 10 mA 50 mA 250 mA 500 mA
hFE , DC CURRENT GAIN
25°C
2.0
1.5
−55 °C VCE = 5.0 V
1.0 0.5 0.1 0.2
2.0 k 5.0 7.0
10
20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA)
500
0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (mA)
500 1000
Figure 8. DC Current Gain
Figure 9. Collector Saturation Region
RθV, .