ON Semiconductort
One Watt Darlington Transistors
PNP Silicon
w
These devices are available in Pb−free package(s). Spec...
ON Semiconductort
One Watt Darlington
Transistors
PNP Silicon
w
These devices are available in Pb−free package(s). Specifications herein apply to both standard and Pb−free devices. Please see our website at www.onsemi.com for specific Pb−free orderable part numbers, or contact your local ON Semiconductor sales office or representative.
MPSW63 MPSW64 *
*ON Semiconductor Preferred Device
MAXIMUM RATINGS
Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCES VCBO VEBO IC PD PD TJ, Tstg MPSW63 MPSW64 −30 −30 −10 −500 1.0 8.0 2.5 20 − 55 to +150
www.DataSheet4U.com
1
2
Unit Vdc Vdc Vdc mAdc Watt mW/°C Watts mW/°C °C
3
CASE 29−10, STYLE 1 TO−92 (TO−226AE)
COLLECTOR 3 BASE 2
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 125 50 Unit °C/W °C/W EMITTER 1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage (IC = −100 μAdc, VBE = 0) Collector Cutoff Current (VCB = −30 Vdc, IE = 0) Emitter Cutoff Current (VEB = −10 Vdc, IC = 0) V(BR)CES ICBO IEBO −30 — — — −100 −100 Vdc nAdc nAdc
Preferred devices are ON Semiconductor recommended choices for future use and bes...