MPSA62

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. B MPSA62/63/64 EPITAXIAL PLANAR PNP TRANSISTOR C FEATURES A ᴌComplementary to MPSA13/14. N K E G CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range MPSA62 MPSA63/64 MPSA62 MPSA63/64 SYMBOL VCBO RATING -20 -30 -20 -30 -10 -500 625 150 -55ᴕ150 UNIT V F H F L M C VCES VEBO IC PC Tj Tstg V V mA mW ᴱ ᴱ 1 2 3 J MAXIMUM RATING (Ta=25ᴱ) D DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 1. EMITTER 2. BASE 3. COLLECTOR TO-92 www.DataSheet4U.com ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current MPSA62 MPSA63 DC Current Gain MPSA64 MPSA63 MPSA64 Collector-Emitter Saturation Voltage Base Emitter Voltage Current Gain Bandwith Product MPSA62 MPSA63/64 MPSA62 MPSA63/64 MPSA63/64 VCE(sat) hFE IC=-100mA, VCE=-5V IC=-10mA, IB=-0.01mA IC=-100mA, IB=-0.1mA IC=-10mA, VCE=-5V IC=-100mA, VCE=-5V IC=-10mA, f=100MHz, VCE=-5V IC=-10mA, VCE=-5V MPSA62 MPSA63/64 MPSA62 MPSA63/64 SYMBOL V(BR)CES TEST CONDITION IC=-0.1mA, IB=0 VCB=-15V, IE=0 VCB=-30V, IE=0 VEB=-10V, IC=0 MIN. -20 -30 20,000 5,000 10,000 10,000 20,000 125 TYP. MAX. -0.1 -0.1 -1.0 -1.5 -1.4 -2.0 V UNIT V ICBO IEBO Ọ A Ọ A VBE fT V MHz...