MPSA62

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPSA62/D Darlington Transistors PNP Silicon COLLECTOR 3 MPSA62 thru MPSA64 * BASE 2 MPSA55, MPSA56 For Specifications, See MPSA05, MPSA06 Data *Motorola Preferred Device EMITTER 1 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCES VCBO VEBO IC PD PD TJ, Tstg MPSA62 –20 –20 –10 –500 625 5.0 1.5 12 www.DataSheet4U.com MPSA63 MPSA64 –30 –30 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C 1 2 3 CASE 29–04, STYLE 1 TO–92 (TO–226AA) – 55 to +150 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol Rq JA Rq JC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = –100 µAdc, VBE = 0) Collector Cutoff Current (VCB= –15 Vdc, IE = 0) (VCB = –30 Vdc, IE = 0) Emitter Cutoff Current (VEB = –10 Vdc, IC = 0) V(BR)CES MPSA62 MPSA63, MPSA64 ICBO MPSA62 MPSA63, MPSA64 IEBO — — — –100 –100 –100 nAdc –20 –30 — — nAdc Vdc Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small–Signal Transistors, FETs and Diodes Device Data © M...