MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MSC2295–BT1/D
NPN RF Amplifier Transistors Surface Mount...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MSC2295–BT1/D
NPN RF Amplifier
Transistors Surface Mount
COLLECTOR 3
MSC2295-BT1 MSC2295-CT1
Motorola Preferred Devices
3
2 BASE
1 EMITTER
2 1
MAXIMUM RATINGS (TA = 25°C)
Rating Collector–Base Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value 30 20 5.0 30 Unit Vdc Vdc Vdc mAdc CASE 318D–03, STYLE 1 SC–59
THERMAL CHARACTERISTICS
Characteristic Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150
www.DataSheet4U.com
Unit mW °C °C
– 55 ~ +150
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic Collector–Base Cutoff Current (VCB = 10 Vdc, IE = 0) DC Current Gain(1) (VCB = 10 Vdc, IC = –1.0 mAdc) Collector–Gain — Bandwidth Product (VCB = 10 Vdc, IE = –1.0 mAdc) Reverse
Transistor Capacitance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 10.7 MHz) 1. Pulse Test: Pulse Width ≤ 300 µs, D.C. ≤ 2%. Symbol ICBO hFE MSC2295–BT1 MSC2295–CT1 fT Cre 70 110 150 — 140 220 — 1.5 MHz pF Min — Max 0.1 Unit µAdc —
DEVICE MARKING Marking Symbol
VBX
MSC2295–BT1
VCX
MSC2295–CT1
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured. Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
© Motorola, Inc. 1996
Motorola Small–Signal
Transistors, FETs and Diodes D...
