MSC2295-BT1

MSC2295−BT1, MSC2295−CT1 Preferred Device NPN RF Amplifier Transistors Surface Mount Features Pb−Free Packages are Available MAXIMUM RATINGS (TA = 25°C) Rating Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value 30 20 5.0 30 Unit Vdc Vdc Vdc mAdc http://onsemi.com COLLECTOR 3 2 BASE 1 EMITTER THERMAL CHARACTERISTICS Characteristic Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150 −55 to +150 Unit mW °C °C 2 1 3 SC−59 CASE 318D Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress www.DataSheet4U.com limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. MARKING DIAGRAM ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Collector−Base Cutoff Current (VCB = 10 Vdc, IE = 0) DC Current Gain (Note 1) (VCB = 10 Vdc, IC = −1.0 mAdc) MSC2295−BT1 MSC2295−CT1 Collector−Gain — Bandwidth Product (VCB = 10 Vdc, IE = −1.0 mAdc) Reverse Transistor Capacitance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 10.7 MHz) Symbol ICBO − hFE 70 110 fT 150 Cre − 1.5 − pF Device MSC2295−BT1 MSC2295−BT1G MSC2295−CT1 MSC2295−CT1G 140 220 MHz 0.1 − Min Max Unit mAdc Vx M G G = Device Code x= B or C M = Date Code* G = Pb−Free Package (Note: Microdot ...