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MUN5115DW1T1 Dataheets PDF



Part Number MUN5115DW1T1
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description (MUN5111DW1T1 Series) Dual Bias Resistor Transistors
Datasheet MUN5115DW1T1 DatasheetMUN5115DW1T1 Datasheet (PDF)

MUN5111DW1T1 Series Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into .

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MUN5111DW1T1 Series Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5111DW1T1 series, two BRT devices are housed in the SOT−363 package which is ideal for low−power surface mount applications where board space is at a premium. Features http://onsemi.com (3) R1 Q1 Q2 R2 (4) R1 (5) (6) (2) R2 (1) • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count Pb−Free Packages are Available 1 MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 and Q2) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value Unit SOT−363 CASE 419B STYLE 1 www.DataSheet4U.com −50 Vdc −50 −100 Vdc mAdc THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Lead Junction and Storage Temperature Range Symbol PD Max 187 (Note 1) 256 (Note 2) 1.5 (Note 1) 2.0 (Note 2) 670 (Note 1) 490 (Note 2) Max 250 (Note 1) 385 (Note 2) 2.0 (Note 1) 3.0 (Note 2) 493 (Note 1) 325 (Note 2) 188 (Note 1) 208 (Note 2) −55 to +150 Unit mW mW/°C °C/W MARKING DIAGRAM 6 xx M G G 1 RqJA Symbol PD Unit mW mW/°C °C/W °C/W xx M G = Device Code (Refer to page 2) = Date Code = Pb−Free Package (Note: Microdot may be in either location) RqJA RqJL TJ, Tstg ORDERING INFORMATION See detailed ordering and shipping information in the table on page 2 of this data sheet. DEVICE MARKING INFORMATION °C See specific marking information in the device marking table on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 x 1.0 inch Pad © Semiconductor Components Industries, LLC, 2005 1 September, 2005 − Rev. 6 Publication Order Number: MUN5111DW1T1/D MUN5111DW1T1 Series DEVICE MARKING AND RESISTOR VALUES Device MUN5111DW1T1 MUN5111DW1T1G MUN5112DW1T1 MUN5112DW1T1G MUN5113DW1T1 MUN5113DW1T1G MUN5114DW1T1 MUN5114DW1T1G MUN5115DW1T1 MUN5115DW1T1G MUN5116DW1T1 MUN5116DW1T1G MUN5130DW1T1 MUN5130DW1T1G .


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