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MUR110 Dataheets PDF



Part Number MUR110
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description (MUR120 Series) Power Rectifiers
Datasheet MUR110 DatasheetMUR110 Datasheet (PDF)

MUR120 Series SWITCHMODE Power Rectifiers MUR105, MUR110, MUR115, MUR120, MUR130, MUR140, MUR160 The MUR120 series of SWITCHMODE power rectifiers are designed for use in switching power supplies, inverters and as free wheeling diodes. Features • Ultrafast 25, 50 and 75 Nanosecond Recovery Times • 175°C Operating Junction Temperature • Low Forward Voltage • Low Leakage Current • High Temperature Glass Passivated Junction • Reverse Voltage to 600 V • Shipped in Plastic Bags; 1,000 per Bag • Avail.

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MUR120 Series SWITCHMODE Power Rectifiers MUR105, MUR110, MUR115, MUR120, MUR130, MUR140, MUR160 The MUR120 series of SWITCHMODE power rectifiers are designed for use in switching power supplies, inverters and as free wheeling diodes. Features • Ultrafast 25, 50 and 75 Nanosecond Recovery Times • 175°C Operating Junction Temperature • Low Forward Voltage • Low Leakage Current • High Temperature Glass Passivated Junction • Reverse Voltage to 600 V • Shipped in Plastic Bags; 1,000 per Bag • Available Tape and Reel; 5,000 per Reel, by adding a “RL’’ Suffix to the Part Number • These are Pb−Free Devices* Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 0.4 Gram (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds • Polarity: Cathode Indicated by Polarity Band http://onsemi.com ULTRAFAST RECTIFIERS 1.0 AMPERE, 50 − 600 VOLTS AXIAL LEAD CASE 59 STYLE 1 MARKING DIAGRAM A MUR 1xx YYWW G G A = Assembly Location MUR1xx = Specific Device Code Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 May, 2013 − Rev. 12 1 Publication Order Number: MUR120/D MUR120 Series MAXIMUM RATINGS MUR Rating Symbol 105 110 115 120 130 140 160 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Square Wave Mounting Method #3 Per Note 2) VRRM VRWM VR IF(AV) 50 100 150 200 300 400 600 1.0 @ TA = 130°C 1.0 @ TA = 120°C V A Nonrepetitive Peak Surge Current IFSM 35 A (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) Operating Junction Temperature and Storage Temperature TJ, Tstg *65 to +175 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Maximum Thermal Resistance, Junction−to−Ambient Symbol RqJA Max Note 2 Unit °C/W ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 1) (iF = 1.0 Amp, TJ = 150°C) (iF = 1.0 Amp, TJ = 25°C) Maximum Instantaneous Reverse Current (Note 1) (Rated DC Voltage, TJ = 150°C) (Rated DC Voltage, TJ = 25°C) Maximum Reverse Recovery Time (IF = 1.0 A, di/dt = 50 A/ms) (IF = 0.5 A, iR = 1.0 A, IREC = 0.25 A) Maximum Forward Recovery Time (IF = 1.0 A, di/dt = 100 A/ms, IREC to 1.0 V) Typical Peak Reverse Recovery Current (IF = 1.0 A, di/dt = 50 A/ms) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. Symbol vF iR trr tfr IRM Value 0.710 0.875 1.05 1.25 50 150 2.0 5.0 35 75 25 50 25 50 0.85 Unit V mA ns ns A http://onsemi.com 2 iF, INSTANTANEOUS FORWARD CURRENT (AMPS) MUR120 Series MUR105, MUR110, MUR115, MUR120 10 7.0 5.0 3.0 TJ = 175°C 100°C 2.0 25°C 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 vF, INSTANTANEOUS VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage 1.3 5.0 TJ = 175°C 4.0 3.0 (CAPACITIVE LOAD) IPK IAV + 20 10 5.0 IF(AV), AVERAGE FORWARD CURRENT (AMPS) IR, REVERSE CURRENT (mA) 100 TJ = 175°C 10 1.0 100°C 0.1 0.01 25°C 0.001 0 20 40 60 80 100 120 140 160 180 200 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Typical Reverse Current* * The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if VR is sufficiently below rated VR. 5.0 4.0 RATED VR RqJA = 50°C/W 3.0 2.0 dc SQUARE WAVE 1.0 0 0 50 100 150 200 250 TA, AMBIENT TEMPERATURE (°C) Figure 3. Current Derating (Mounting Method #3 Per Note 1) 50 TJ = 25°C 30 20 C, CAPACITANCE (pF) 2.0 1.0 0 0 dc SQUARE WAVE 0.5 1.0 1.5 2.0 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 4. Power Dissipation 2.5 10 7.0 5.0 0 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Typical Capacitance 50 PF(AV), AVERAGE POWER DISSIPATION (WATTS) http://onsemi.com 3 iF, INSTANTANEOUS FORWARD CURRENT (AMPS) MUR120 Series MUR130, MUR140, MUR160 10 7.0 5.0 3.0 TJ = 175°C 100°C 2.0 25°C 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 vF, INSTANTANEOUS VOLTAGE (VOLTS) Figure 6. Typical Forward Voltage 2.3 5.0 TJ = 175°C 4.0 5.0 3.0 (CAPACITIVE LOAD) 10 2.0 IPK IAV + 20 dc SQUARE WAVE 1.0 0 0 0.5 1.0 1.5 2.0 2.5 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 9. Power Dissipation C, .


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