Power Rectifiers. MUR140 Datasheet

MUR140 Rectifiers. Datasheet pdf. Equivalent

Part MUR140
Description (MUR120 Series) Power Rectifiers
Feature .
Manufacture ON Semiconductor
Datasheet
Download MUR140 Datasheet




MUR140
MUR120 Series
SWITCHMODE
Power Rectifiers
MUR105, MUR110, MUR115, MUR120,
MUR130, MUR140, MUR160
The MUR120 series of SWITCHMODE power rectifiers are
designed for use in switching power supplies, inverters and as free
wheeling diodes.
Features
Ultrafast 25, 50 and 75 Nanosecond Recovery Times
175°C Operating Junction Temperature
Low Forward Voltage
Low Leakage Current
High Temperature Glass Passivated Junction
Reverse Voltage to 600 V
Shipped in Plastic Bags; 1,000 per Bag
Available Tape and Reel; 5,000 per Reel, by adding a “RL’’ Suffix to
the Part Number
These are PbFree Devices*
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 0.4 Gram (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Polarity: Cathode Indicated by Polarity Band
http://onsemi.com
ULTRAFAST RECTIFIERS
1.0 AMPERE, 50 600 VOLTS
AXIAL LEAD
CASE 59
STYLE 1
MARKING DIAGRAM
A
MUR
1xx
YYWW G
G
A = Assembly Location
MUR1xx = Specific Device Code
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
May, 2013 Rev. 12
1
Publication Order Number:
MUR120/D



MUR140
MUR120 Series
MAXIMUM RATINGS
MUR
Rating
Symbol 105 110 115 120 130 140 160 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Square Wave Mounting Method #3 Per Note 2)
VRRM
VRWM
VR
IF(AV)
50 100 150 200 300 400 600
1.0 @ TA = 130°C
1.0 @ TA = 120°C
V
A
Nonrepetitive Peak Surge Current
IFSM 35 A
(Surge applied at rated load conditions, halfwave,
single phase, 60 Hz)
Operating Junction Temperature and Storage Temperature
TJ, Tstg
*65 to +175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance, JunctiontoAmbient
Symbol
RqJA
Max
Note 2
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 1)
(iF = 1.0 Amp, TJ = 150°C)
(iF = 1.0 Amp, TJ = 25°C)
Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, TJ = 150°C)
(Rated DC Voltage, TJ = 25°C)
Maximum Reverse Recovery Time
(IF = 1.0 A, di/dt = 50 A/ms)
(IF = 0.5 A, iR = 1.0 A, IREC = 0.25 A)
Maximum Forward Recovery Time
(IF = 1.0 A, di/dt = 100 A/ms, IREC to 1.0 V)
Typical Peak Reverse Recovery Current
(IF = 1.0 A, di/dt = 50 A/ms)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
Symbol
vF
iR
trr
tfr
IRM
Value
0.710
0.875
1.05
1.25
50 150
2.0 5.0
35 75
25 50
25 50
0.85
Unit
V
mA
ns
ns
A
http://onsemi.com
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