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MUR180E Dataheets PDF



Part Number MUR180E
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description (MUR180E / MUR1100E) Power Rectifiers
Datasheet MUR180E DatasheetMUR180E Datasheet (PDF)

MUR180E, MUR1100E MUR1100E is a Preferred Device SWITCHMODEt Power Rectifiers Ultrafast “E” Series with High Reverse Energy Capability These state−of−the−art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. Features http://onsemi.com • 10 mjoules Avalanche Energy Guaranteed • Excellent Protection Against Voltage Transients in Switching • • • • • • • Inductive Load Circuits Ultrafast 75 Nanosecond Recovery Time 175°C Operating Junction Temperature.

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MUR180E, MUR1100E MUR1100E is a Preferred Device SWITCHMODEt Power Rectifiers Ultrafast “E” Series with High Reverse Energy Capability These state−of−the−art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. Features http://onsemi.com • 10 mjoules Avalanche Energy Guaranteed • Excellent Protection Against Voltage Transients in Switching • • • • • • • Inductive Load Circuits Ultrafast 75 Nanosecond Recovery Time 175°C Operating Junction Temperature Low Forward Voltage Low Leakage Current High Temperature Glass Passivated Junction Reverse Voltage to 1000 V These are Pb−Free Devices* ULTRAFAST RECTIFIERS 1.0 AMPERES, 800−1000 VOLTS Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 0.4 Gram (Approximately) www.DataSheet4U.com • Finish: All External Surfaces Corrosion Resistant and Terminal • Lead Temperature for Soldering Purposes: • • • Leads are Readily Solderable 260°C Max. for 10 Seconds Shipped in Plastic Bags; 1,000 per Bag Available Tape and Reel; 5,000 per Reel, by Adding a “RL’’ Suffix to the Part Number Polarity: Cathode Indicated by Polarity Band Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Symbol VRRM VRWM VR IF(AV) IFSM Value Unit V 800 1000 1.0 @ TA = 95°C 35 A A PLASTIC AXIAL LEAD CASE 59 MARKING DIAGRAM MAXIMUM RATINGS A MUR1x0E YYWW G G MUR180E MUR1100E Average Rectified Forward Current (Note 1) (Square Wave Mounting Method #3 Per Note 3) Non-Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) Operating Junction Temperature and Storage Temperature Range TJ, Tstg −65 to +175 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 A = Assembly Location MUR1x0E = Device Code x 8 or 10 Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. 1 July, 2006 − Rev. 3 Publication Order Number: MUR180E/D MUR180E, MUR1100E THERMAL CHARACTERISTICS Charateristics Maximum Thermal Resistance, Junction−to−Ambient Symbol RqJA Value See Note 3 Unit °C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 2) (iF = 1.0 Amp, TJ = 150°C) (iF = 1.0 Amp, TJ = 25°C) Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, T.


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