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MUR2100E

ON Semiconductor

Power Rectifier

MUR2100E Preferred Device SWITCHMODE™ Power Rectifier Ultrafast “E” Series with High Reverse Energy Capability . . . de...


ON Semiconductor

MUR2100E

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Description
MUR2100E Preferred Device SWITCHMODE™ Power Rectifier Ultrafast “E” Series with High Reverse Energy Capability . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state−of−the−art devices have the following features: http://onsemi.com 20 mjoules Avalanche Energy Guaranteed Excellent Protection Against Voltage Transients in Switching Inductive Load Circuits Ultrafast 75 Nanosecond Recovery Time 175°C Operating Junction Temperature Low Forward Voltage Low Leakage Current High Temperature Glass Passivated Junction These are Pb−Free Devices ULTRAFAST RECTIFIER 2 AMPS 1000 VOLTS Mechanical Characteristics Case: Epoxy, Molded Weight: 0.4 gram (approximately) www.DataSheet4U.com Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 220°C Max. for 10 Seconds, 1/16″ from case Polarity: Cathode Indicated by Polarity Band Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Note 1) Non-Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) Operating Junction Temperature and Storage Temperature Range Symbol VRRM VRWM VR IF(AV) IFSM Value 1000 Unit V MUR 2100E 2.0 @ TA = 35°C 35 A MUR2100E = Device Code A AXIAL LEAD PLASTIC CASE 059 MAXIMUM RATINGS MARKING DIAGRAM TJ, Tstg −65 to +175 °C ORDERING...




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