NTHD4401P

NTHD4401P Power MOSFET Features −20 V, −3.0 A, Dual P−Channel, ChipFETt Low RDS(on) and Fast Switching Speed in a ChipFET Package Leadless ChipFET Package 40% Smaller Footprint than TSOP−6 ChipFET Package with Excellent Thermal Capabilities where Heat Pb−Free Package is Available Applications http://onsemi.com Transfer is Required V(BR)DSS −20 V RDS(on) TYP 130 mW @ −4.5 V 200 mW @ −2.5 V ID MAX −3.0 A Charge Control in Battery Chargers Optimized for Battery and Load Management Applications in Portable Equipment MP3 Players, Cell Phones, Digital Cameras, PDAs Buck and Boost DC−DC Converters G1 S1 S2 G2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State tv5s Power Dissipation (Note 1) Steady State tv5s Pulsed Drain Current TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C IDM TJ, Tstg IS TL PD Symbol VDSS VGS ID Value −20 "12 −2.1 −1.5 −3.0 1.1 0.6 2.1 −9.0 −55 to 150 −2.5 260 A °C A °C D1 8 D1 7 D2 6 D2 5 1 S1 2 G1 3 S2 4 G2 1 C4 M G 2 3 4 8 7 6 5 W Unit V V A D1 P−Channel MOSFET D2 P−Channel MOSFET www.DataSheet4U.com ChipFET CASE 1206A STYLE 2 PIN CONNECTIONS MARKING DIAGRAM tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) THERMAL RESISTANCE RATINGS Rating Junction−to−Ambient − Steady State (Note 1) Junction−to−Ambient − t v 5 s Symbo...