NTLJD4150P

NTLJD4150P Power MOSFET −30 V, −3.4 A, Dual P−Channel, 2x2 mm WDFN Package Features WDFN 2x2 mm Package Provides Exposed Drain Pad for Excellent Thermal Conduction Footprint Same as SC−88 Package Low Profile (< 0.8 mm) for Easy Fit in Thin Environments Bidirectional Current Flow with Common Source Configuration This is a Pb−Free Device Applications Li−Ion Battery Charging and Protection Circuits LED Backlight, Flashlight Dual−High Side Load Switch MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS −30 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current Steady TA = 25°C ID (Note 1) State TA = 85°C −2.7 A −2.0 t ≤ 5 s TA = 25°C −3.4 Power Dissipation (Note 1) Steady PD State TA = 25°C t ≤5 s 1.5 W 2.3 Continuous Drain Current TA = 25°C ID (Note 2) Steady TA = 85°C Power Dissipation (Note 2) State TA = 25°C PD −1.8 A −1.4 0.7 W Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) (Note 2) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IDM −14 A TJ, −55 to °C TSTG 150 IS −1.8 A TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] in...