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NTLTS3107P Dataheets PDF



Part Number NTLTS3107P
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet NTLTS3107P DatasheetNTLTS3107P Datasheet (PDF)

NTLTS3107P Power MOSFET Features −20 V, −8.3 A, Single P−Channel, Micro8 Leadless Package • • • • • Low RDS(on) for Extended Battery Life Surface Mount Micro8 Leadless for Improved Thermal Performance Low Profile (<1.0 mm) Optimal for Portable Designs Low Turn−On Voltage This is a Pb−Free Device http://onsemi.com V(BR)DSS −20 V RDS(on) TYP 12.2 mW @ −4.5 V 15.6 mW @ −2.5 V 26.2 mW @ −1.8 V P−Channel MOSFET S Value −20 $8.0 −8.3 −6.0 −12 PD ID PD IDM TJ, TSTG IS TL 1.6 3.3 −5.9 −3.7 0.8 −25 −55 .

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NTLTS3107P Power MOSFET Features −20 V, −8.3 A, Single P−Channel, Micro8 Leadless Package • • • • • Low RDS(on) for Extended Battery Life Surface Mount Micro8 Leadless for Improved Thermal Performance Low Profile (<1.0 mm) Optimal for Portable Designs Low Turn−On Voltage This is a Pb−Free Device http://onsemi.com V(BR)DSS −20 V RDS(on) TYP 12.2 mW @ −4.5 V 15.6 mW @ −2.5 V 26.2 mW @ −1.8 V P−Channel MOSFET S Value −20 $8.0 −8.3 −6.0 −12 PD ID PD IDM TJ, TSTG IS TL 1.6 3.3 −5.9 −3.7 0.8 −25 −55 to 150 −1.6 260 W A °C A °C Drain Symbol RqJA RqJA RqJA Max 80 38 160 Unit °C/W °C/W °C/W Drain Drain Drain W A 1 Micro8 Leadless CASE 846C A Y WW G www.DataSheet4U.com ID MAX −8.3 A Applications • Optimized for Load Management Applications • Charge Control in Battery Powered Systems • Cell Phones, DSC, Notebooks, Portable Games, etc. MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State t v 10 s Power Dissipation (Note 1) Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current (Note 1) Steady State t v 10 s Steady State TA = 25°C TA = 85°C TA = 25°C tp = 10 ms TA = 25°C TA = 85°C TA = 25°C TA = 25°C Symbol VDSS VGS ID Unit V V A G D MARKING DIAGRAM 1 3107 AYWW G Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8 in from case for 10 s) = Assembly Location = Year = Work Week = Pb−Free Package PIN ASSIGNMENT 8 7 6 5 1 THERMAL RESISTANCE RATINGS Parameter Junction−to−Ambient – Steady State (Note 1) Junction−to−Ambient – t v 10 s (Note 1) Junction−to−Ambient – Steady State (Note 2) Source Source Source Gate Drain 2 3 4 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 sq. in. pad size (Cu. area = 1.127 sq. in. [1 oz] including traces). 2. Surface−mounted on FR4 board using minimum recommended pad size (Cu. area = TBD sq. in.). (Bottom View) ORDERING INFORMATION Device NTLTS3107PR2G Package Micro8 (Pb−Free) Shipping † 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2005 October, 2005 − Rev. 0 1 Publication Order Number: NTLTS3107P/D NTLTS3107P ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH) VGS(TH)/TJ RDS(on) VGS = VDS, ID = −250 mA VGS = −4.5 V, ID = −8.0 A VGS = −2.5 V, ID = −7.0 A VGS = −1.8 V, ID = −5.8 A Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Gate Charge Gate−to−Drain “Miller” Charge SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) tf VSD tRR ta tb QRR VGS = 0 V, dIS/dt = 100 A/ms, IS = −1.6 A TJ = 25°C TJ = 125°C VGS = −4.5 V, VDS = −10 V, ID = −8.0 A, RG = 3.0 W 30 20 250 80 ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD VGS = −4.5 V, VDS = −16 V, ID = −8.0 A VGS = 0 V, f = 1 MHz, VDS = −16 V 4645 465 285 40 3.0 7.0 11 6500 650 400 60 nC pF gFS VDS = −5 V, ID = −8.0 A −0.45 3.4 12.2 15.6 26.2 25 S 16 21 −1.2 V mV/°C mW V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS = 0 V, VDS = −16 V TJ = 25°C VGS = 0 V, ID = −250 mA −20 11 −10 ±100 V mV/°C mA nA Symbol Test Condition Min Typ Max Unit VDS = 0 V, VGS = $8.0 V DRAIN−SOURCE DIODE CHARACTERISTICS (Note 3) Forward Diode Voltage VGS = 0 V, IS = −1.6 A −0.7 0.5 75 28 47 81.5 nC 100 ns −1.2 V Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTLTS3107P 32 −ID, DRAIN CURRENT (A) VGS = 10 V 5V 24 3.6 V 16 3.2 V 2.8 V 2.4 V 8 1.2 V 0 2 4 2V 1.8 V 6 8 10 0 0 32 4.5 V −ID, DRAIN CURRENT (A) 4V 24 16 TJ = 125°C TJ = 25°C TJ = −55°C 8 0 2 4 6 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) −VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) Figure 2. Transfer Characteristics 0.026 VGS = −4.5 V 0.022 TJ = 125°C 0.018 TJ = 25°C 0.014 TJ = −55°C 0.01 0 5 10 15 20 −ID, DRAIN CURRENT (A) 25 30 0.0.


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