NTS4101P

NTS4101P Power MOSFET −20 V, −1.37 A, Single P−Channel, SC−70 Features Leading −20 V Trench for Low RDS(on) −2.5 V Rated for Low Voltage Gate Drive SC−70 Surface Mount for Small Footprint (2x2 mm) Pb−Free Package is Available Applications High Side Load Switch Charging Circuit Single Cell Battery Applications such as: Cell Phones, Digital Cameras, PDAs MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State Power Dissipation (Note 1) Steady State TA = 25°C TA = 70°C TA = 25°C VDSS VGS ID PD −20 ±8 −1.37 −0.62 0.329 Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode), Continuous Lead Temperature for Soldering Purposes (1/8” from case for 10 s) IDM TJ, TSTG IS TL −4.0 −55 to 150 −0.5 260 Units V V A W A °C A °C THERMAL RESISTANCE RAT...