Document
STTH120R04TV
Ultrafast recovery diode
Main product characteristics
IF(AV) VRRM Tj VF (typ) trr (typ) 2 x 60 A 400 V 150° C 0.95 V 31 ns
A1
K1
A1
K2
A2
K2
K1
A2
A1
A1 K1 K2 K1
Features and benefits
■ ■ ■ ■ ■
Ultrafast Very low switching losses High frequency and high pulsed current operation Low leakage current Insulated package: – ISOTOP Electrical insulation = 2500 VRMS Capacitance = 45 pF
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A2 K2 ISOTOP STTH120R04TV1
A2 ISOTOP STTH120R04TV2
Order codes
Part Number Marking STTH120R04TV1 STTH120R04TV2 STTH120R04TV1 STTH120R04TV2
Description
The STTH120R04TV series uses ST's new 400 V planar Pt doping technology. The STTH120R04 is specially suited for switching mode base drive and transistor circuits, such as welding equipment.
March 2007
Rev 1
1/7
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Characteristics
STTH120R04TV
1
Table 1.
Symbol VRRM VRSM IF(RMS) IF(AV) IFRM IFSM Tstg Tj
Characteristics
Absolute ratings (limiting values per diode at 25° C, unless otherwise specified)
Parameter Repetitive peak reverse voltage Non repetitive peak reverse voltage RMS forward current Average forward current, δ = 0.5 Repetitive peak forward current Per diode Per diode Per package tp = 5 µs, F = 1 kHz square Tc = 75° C Tc = 70° C Value 400 400 140 60 120 1800 700 -65 to + 150 150 Unit V V A A A A A °C °C
Surge non repetitive forward current tp = 10 ms Sinusoidal Storage temperature range Maximum operating junction temperature
Table 2.
Thermal parameters
Symbol Rth(j-c) Rth(c) Parameter Per diode Junction to case Total Coupling thermal resistance
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Value 0.8 0.45 0.1
Unit
° C/W
When the diodes are used simultaneously: ΔTj(diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) Table 3.
Symbol IR(1)
Static electrical characteristics
Parameter Reverse leakage current Test conditions Tj = 25° C Tj = 125° C Tj = 25° C VR = VRRM Min. Typ Max. 60 µA 60 600 1.5 IF = 60 A 1.05 0.95 1.3 1.2 V Unit
VF(2)
Forward voltage drop
Tj = 100° C Tj = 150° C
1. Pulse test: tp = 5 ms, δ < 2 % 2. Pulse test: tp = 380 µs, δ < 2 %
To evaluate the conduction losses use the following equation: P = 0.9 x IF(AV) + 0.005 x IF2(RMS)
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STTH120R04TV Table 4.
Symbol
Characteristics
Dynamic characteristics
Parameter Test conditions IF = 1 A, dIF/dt = -50 A/µs, VR = 30 V, Tj = 25° C Min. Typ Max. 80 40 31 11 0.4 600 3.2 ns V 55 45 16 A ns Unit
trr
Reverse recovery time
IF = 1 A, dIF/dt = -100 A/µs, VR = 30 V, Tj = 25° C IF = 1 A, dIF/dt = -200 A/µs, VR = 30 V, Tj = 25° C
IRM S tfr VFP
Reverse recovery current Softness factor Forward recovery time Forward recovery voltage
IF = 60 A, dIF/dt = -200 A/µs, VR = 320 V, Tj = 125° C IF = 60 A, dIF/dt = -200 A/µs, VR = 320 V, Tj = 125° C dIF/dt = 100 A/µs IF = 60 A VFR = 1.5 x VFmax, Tj = 25° C IF = 60 A, dIF/dt = 100 A/µs, Tj = 25° C
Figure 1.
P(W)
100
Conduction losses versus average current
δ=0.5 δ=1
Figure 2.
IFM(A)
Forward voltage drop versus forward current
200 180
80
δ=0.1 δ=0.05
δ=0.2
160 140
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TJ=150°C (Maximum values)
60
100
40
T
TJ=150°C (Typical values)
80 60
20 IF(AV)(A) 0 0 10 20 30 40 50 60 70 80
40
TJ=25°C (Maximum values)
δ=tp/T
tp
20 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VFM(V) 2.0 2.2
Figure 3.
Relative variation of thermal impedance junction to case versus pulse duration
Figure 4.
Peak reverse recovery current versus dIF/dt (typical values)
Zth(j-c)/Rth(j-c)
1.0
Single pulse ISOTOP
25.0 22.5 20.0 17.5 15.0 12.5 10.0 7.5 5.0
IRM(A)
IF= 60A VR=320V
Tj=125 °C
tp(s) 0.1 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
2.5 0.0 10
Tj=25 °C
dIF/dt(A/µs) 100 1000
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Characteristics
STTH120R04TV
Figure 5.
160 140 120 100
Reverse recovery time versus dIF/dt (typical values)
IF= 60A VR=320V
Figure 6.
800 700 600 500
Reverse recovery charges versus dIF/dt (typical values)
tRR(ns)
QRR(nC)
IF= 60 A VR=320V
Tj=125 °C
Tj=125 °C
80 60 40 20 dIF/dt(A/µs) 0 10 100 1000
400 300
Tj=25 °C
200 100 0 10
Tj=25 °C
dIF/dt(A/µs) 100 1000
Figure 7.
Relative variations of dynamic parameters versus junction temperature
Figure 8.
Transient peak forward voltage versus dIF/dt (typical values)
1.4 1.2 1.0 0.8 0.6
QRR [Tj]/QRR [Tj = 125° C] and IRM [Tj]/IRM [Tj = 125° C]
IF=60A VR=320V
VFp(V)
12 11 10 9 8
IF= 60A Tj=125°C
IRM
7 6 5
QRR
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0.4 0.2 T j(°C) 0.0 25 50 75 100 125 150
1 0 0 50 100 150 200
dIF/dt(A/µs) 250 300 350 400 450 500
Figure 9.
Forward recovery time versus dIF/dt Figure 10. Junction capacitance versus (typical values) reverse voltage applied (typical values)
C(pF)
1000
IF=60A VFR=1.5 x V F max. Tj=125°C
F=1MHz VOSC=30mVRMS Tj=25°C
4000 3500 3000 2500 2000 1500 1000 500 0
tFR(ns)
dIF/dt(A/µs)
VR(V) 100
0
100
200
300
400
500
1
10
100
1000
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STTH120R04TV
Package information
2
Package information
Epoxy meets UL94, V0 Cooling method: by conduction (C) Table 5. ISOTOP dimensions
Dimensions Ref. Millimeters Min.
E G2
Inches Min. 0.465 0.350 0..