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STTH120R04TV Dataheets PDF



Part Number STTH120R04TV
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description Ultrafast recovery diode
Datasheet STTH120R04TV DatasheetSTTH120R04TV Datasheet (PDF)

STTH120R04TV Ultrafast recovery diode Main product characteristics IF(AV) VRRM Tj VF (typ) trr (typ) 2 x 60 A 400 V 150° C 0.95 V 31 ns A1 K1 A1 K2 A2 K2 K1 A2 A1 A1 K1 K2 K1 Features and benefits ■ ■ ■ ■ ■ Ultrafast Very low switching losses High frequency and high pulsed current operation Low leakage current Insulated package: – ISOTOP Electrical insulation = 2500 VRMS Capacitance = 45 pF www.DataSheet4U.com A2 K2 ISOTOP STTH120R04TV1 A2 ISOTOP STTH120R04TV2 Order codes Part Num.

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STTH120R04TV Ultrafast recovery diode Main product characteristics IF(AV) VRRM Tj VF (typ) trr (typ) 2 x 60 A 400 V 150° C 0.95 V 31 ns A1 K1 A1 K2 A2 K2 K1 A2 A1 A1 K1 K2 K1 Features and benefits ■ ■ ■ ■ ■ Ultrafast Very low switching losses High frequency and high pulsed current operation Low leakage current Insulated package: – ISOTOP Electrical insulation = 2500 VRMS Capacitance = 45 pF www.DataSheet4U.com A2 K2 ISOTOP STTH120R04TV1 A2 ISOTOP STTH120R04TV2 Order codes Part Number Marking STTH120R04TV1 STTH120R04TV2 STTH120R04TV1 STTH120R04TV2 Description The STTH120R04TV series uses ST's new 400 V planar Pt doping technology. The STTH120R04 is specially suited for switching mode base drive and transistor circuits, such as welding equipment. March 2007 Rev 1 1/7 www.st.com 7 Characteristics STTH120R04TV 1 Table 1. Symbol VRRM VRSM IF(RMS) IF(AV) IFRM IFSM Tstg Tj Characteristics Absolute ratings (limiting values per diode at 25° C, unless otherwise specified) Parameter Repetitive peak reverse voltage Non repetitive peak reverse voltage RMS forward current Average forward current, δ = 0.5 Repetitive peak forward current Per diode Per diode Per package tp = 5 µs, F = 1 kHz square Tc = 75° C Tc = 70° C Value 400 400 140 60 120 1800 700 -65 to + 150 150 Unit V V A A A A A °C °C Surge non repetitive forward current tp = 10 ms Sinusoidal Storage temperature range Maximum operating junction temperature Table 2. Thermal parameters Symbol Rth(j-c) Rth(c) Parameter Per diode Junction to case Total Coupling thermal resistance www.DataSheet4U.com Value 0.8 0.45 0.1 Unit ° C/W When the diodes are used simultaneously: ΔTj(diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) Table 3. Symbol IR(1) Static electrical characteristics Parameter Reverse leakage current Test conditions Tj = 25° C Tj = 125° C Tj = 25° C VR = VRRM Min. Typ Max. 60 µA 60 600 1.5 IF = 60 A 1.05 0.95 1.3 1.2 V Unit VF(2) Forward voltage drop Tj = 100° C Tj = 150° C 1. Pulse test: tp = 5 ms, δ < 2 % 2. Pulse test: tp = 380 µs, δ < 2 % To evaluate the conduction losses use the following equation: P = 0.9 x IF(AV) + 0.005 x IF2(RMS) 2/7 STTH120R04TV Table 4. Symbol Characteristics Dynamic characteristics Parameter Test conditions IF = 1 A, dIF/dt = -50 A/µs, VR = 30 V, Tj = 25° C Min. Typ Max. 80 40 31 11 0.4 600 3.2 ns V 55 45 16 A ns Unit trr Reverse recovery time IF = 1 A, dIF/dt = -100 A/µs, VR = 30 V, Tj = 25° C IF = 1 A, dIF/dt = -200 A/µs, VR = 30 V, Tj = 25° C IRM S tfr VFP Reverse recovery current Softness factor Forward recovery time Forward recovery voltage IF = 60 A, dIF/dt = -200 A/µs, VR = 320 V, Tj = 125° C IF = 60 A, dIF/dt = -200 A/µs, VR = 320 V, Tj = 125° C dIF/dt = 100 A/µs IF = 60 A VFR = 1.5 x VFmax, Tj = 25° C IF = 60 A, dIF/dt = 100 A/µs, Tj = 25° C Figure 1. P(W) 100 Conduction losses versus average current δ=0.5 δ=1 Figure 2. IFM(A) Forward voltage drop versus forward current 200 180 80 δ=0.1 δ=0.05 δ=0.2 160 140 www.DataSheet4U.com 120 TJ=150°C (Maximum values) 60 100 40 T TJ=150°C (Typical values) 80 60 20 IF(AV)(A) 0 0 10 20 30 40 50 60 70 80 40 TJ=25°C (Maximum values) δ=tp/T tp 20 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VFM(V) 2.0 2.2 Figure 3. Relative variation of thermal impedance junction to case versus pulse duration Figure 4. Peak reverse recovery current versus dIF/dt (typical values) Zth(j-c)/Rth(j-c) 1.0 Single pulse ISOTOP 25.0 22.5 20.0 17.5 15.0 12.5 10.0 7.5 5.0 IRM(A) IF= 60A VR=320V Tj=125 °C tp(s) 0.1 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 2.5 0.0 10 Tj=25 °C dIF/dt(A/µs) 100 1000 3/7 Characteristics STTH120R04TV Figure 5. 160 140 120 100 Reverse recovery time versus dIF/dt (typical values) IF= 60A VR=320V Figure 6. 800 700 600 500 Reverse recovery charges versus dIF/dt (typical values) tRR(ns) QRR(nC) IF= 60 A VR=320V Tj=125 °C Tj=125 °C 80 60 40 20 dIF/dt(A/µs) 0 10 100 1000 400 300 Tj=25 °C 200 100 0 10 Tj=25 °C dIF/dt(A/µs) 100 1000 Figure 7. Relative variations of dynamic parameters versus junction temperature Figure 8. Transient peak forward voltage versus dIF/dt (typical values) 1.4 1.2 1.0 0.8 0.6 QRR [Tj]/QRR [Tj = 125° C] and IRM [Tj]/IRM [Tj = 125° C] IF=60A VR=320V VFp(V) 12 11 10 9 8 IF= 60A Tj=125°C IRM 7 6 5 QRR 4 3 2 www.DataSheet4U.com 0.4 0.2 T j(°C) 0.0 25 50 75 100 125 150 1 0 0 50 100 150 200 dIF/dt(A/µs) 250 300 350 400 450 500 Figure 9. Forward recovery time versus dIF/dt Figure 10. Junction capacitance versus (typical values) reverse voltage applied (typical values) C(pF) 1000 IF=60A VFR=1.5 x V F max. Tj=125°C F=1MHz VOSC=30mVRMS Tj=25°C 4000 3500 3000 2500 2000 1500 1000 500 0 tFR(ns) dIF/dt(A/µs) VR(V) 100 0 100 200 300 400 500 1 10 100 1000 4/7 STTH120R04TV Package information 2 Package information Epoxy meets UL94, V0 Cooling method: by conduction (C) Table 5. ISOTOP dimensions Dimensions Ref. Millimeters Min. E G2 Inches Min. 0.465 0.350 0..


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