AT29LV1024

AT29LV1024 Features Single Voltage, Range 3V to 3.6V Supply 3-Volt-Only Read and Write Operation Software Protected Programming Fast Read Access Time - 150 ns Low Power Dissipation 15 mA Active Current 50 µA CMOS Standby Current Sector Program Operation Single Cycle Reprogram (Erase and Program) 512 Sectors (128 words/sector) Internal Address and Data Latches for 128 Words Fast Sector Program Cycle Time - 20 ms Internal Program Control and Timer DATA Polling for End of Program Detection Typical Endurance > 10,000 Cycles CMOS and TTL Compatible Inputs and Outputs Commercial and Industrial Temperature Ranges 1 Megabit (64K x 16) 3-volt Only CMOS Flash Memory Description The AT29LV1024 is a 3-volt-only in-system Flash programmable and erasable read only memory (PEROM). Its 1 megabit of memory is organized as 65,536 words by 16 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of just 54 mW. When the device is deselected, the CMOS standby current is less than 50 µA. The device endurance is such that any sector can typically be written to in excess of 10,000 times. To allow for simple in-system reprogrammability, the AT29LV1024 does not require www.DataSheet4U.com high input voltages for programming. Three-volt-only commands determine the operation of the device. Reading data out of the device is similar to reading from an Pin Configurations Pin Name A0 - A15 CE OE WE I...