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UMA6NT1

ON Semiconductor

Dual Common Emitter Bias Resistor Transistors

UMA4NT1, UMA6NT1 Preferred Devices Dual Common Emitter Bias Resistor Transistors PNP Silicon Surface Mount Transistors ...


ON Semiconductor

UMA6NT1

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Description
UMA4NT1, UMA6NT1 Preferred Devices Dual Common Emitter Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the UMC2NT1 series, two BRT devices are housed in the SOT−353 package which is ideal for low power surface mount applications where board space is at a premium. Features 3 2 1 R1 R1 Q1 4 Q2 5 Simplifies Circuit Design Reduces Board Space Reduces Component Count Pb−Free Packages are Available MARKING DIAGRAM MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 www.DataSheet4U.com and Q2, − minus sign for Q1 (PNP) omitted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc SC−88A/SOT−353 CASE 419A STYLE 7 Ux M G G THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient (Surface Mounted) Operating and Storage Temperature Range Total Package Dissipation @ TA = 25°C (Note 1) RqJA TJ, Tstg PD 833 −65 to +150 *150 °C/W °C mW Ux = Device Code x = 0 or 1 M = Date Code G = Pb−Free Package (Note: Microdot may be in either locatio...




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