UMA4NT1, UMA6NT1
Preferred Devices
Dual Common Emitter Bias Resistor Transistors
PNP Silicon Surface Mount Transistors ...
UMA4NT1, UMA6NT1
Preferred Devices
Dual Common Emitter Bias Resistor
Transistors
PNP Silicon Surface Mount
Transistors with Monolithic Bias Resistor Network
http://onsemi.com
The BRT (Bias Resistor
Transistor) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital
transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the UMC2NT1 series, two BRT devices are housed in the SOT−353 package which is ideal for low power surface mount applications where board space is at a premium.
Features
3
2
1
R1
R1
Q1 4
Q2 5
Simplifies Circuit Design Reduces Board Space Reduces Component Count Pb−Free Packages are Available
MARKING DIAGRAM
MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 www.DataSheet4U.com
and Q2, − minus sign for Q1 (
PNP) omitted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc SC−88A/SOT−353 CASE 419A STYLE 7
Ux M G G
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient (Surface Mounted) Operating and Storage Temperature Range Total Package Dissipation @ TA = 25°C (Note 1) RqJA TJ, Tstg PD 833 −65 to +150 *150 °C/W °C mW
Ux = Device Code x = 0 or 1 M = Date Code G = Pb−Free Package (Note: Microdot may be in either locatio...