P-Channel Power MOSFET
20V P-Channel Power MOSFET General Description
The AAT7157 low threshold 20V, dual P-Channel MOSFET is a member of Analo...
Description
20V P-Channel Power MOSFET General Description
The AAT7157 low threshold 20V, dual P-Channel MOSFET is a member of AnalogicTech™'s TrenchDMOS™ product family. Using an ultra-high density proprietary TrenchDMOS technology the AAT7157 is designed for use as a load switch in battery powered applications and protection in battery packs.
AAT7157
Features
VDS(MAX) = -20V ID(MAX) 1 = -5.8A @ 25°C Low RDS(ON): 36 mΩ @ VGS = -4.5V 62 mΩ @ VGS = -2.5V
Dual SOP-8L Package Applications
Battery Packs Battery-powered portable equipment
D1 8
Top View
D1 7 D2 6 D2 5
1 S1
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2 G1
3 S2
4 G2
Absolute Maximum Ratings
Symbol
VDS VGS ID IDM IS PD TJ, TSTG
(TA=25°C unless otherwise noted) Value
-20 ±12 ±5.8 ±4.6 ±24 -1.5 2.0 1.25 -55 to 150
Description
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TJ=150°C
1
Units
V
TA = 25°C TA = 70°C
1
Pulsed Drain Current 2 Continuous Source Current (Source-Drain Diode) Maximum Power Dissipation
1
A
TA = 25°C TA = 70°C
W °C
Operating Junction and Storage Temperature Range
Thermal Characteristics
Symbol
RθJA RθJA2 RθJF
Description
Typical Junction-to-Ambient steady state Maximum Junction-to-Ambient t<10 seconds Typical Junction-to-Foot 1
1 1
Value
100 62.5 35
Units
°C/W
7157.2004.04.1.0
1
20V P-Channel Power MOSFET Electrical Characteristics
Symbol Description (TJ=25°C unless otherwise noted) Conditions Min
-20 29 49 -24 -0.6 ±100 -1 -5 12 14 2.3 5.5 10 37 36 52 -1.5 -1.5 36 62
AAT7157...
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