AAT8515

AAT8515 20V P-Channel Power MOSFET General Description The AAT8515 is a low threshold P-channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech's ultra-high-density MOSFET process and space-saving, small-outline, J-lead package, performance superior to that normally found in a TSOP-6 footprint has been squeezed into the footprint of an SC70JW-8 package. Features Drain-Source Voltage (max): -20V Continuous Drain Current1 (max): -5.4A @ 25°C Low On-Resistance: — 35mΩ @ VGS = -4.5V — 60mΩ @ VGS = -2.5V Applications Battery Packs Battery-Powered Portable Equipment Cellular and Cordless Telephones SC70JW-8 Package Top View D 8 D 7 D 6 D 5 Absolute Maximum Ratings TA = 25°C, unless otherwise noted. Symbol VDS VGS ID IDM IS TJ TSTG 1 S 2 S 3 S 4 G Description Drain-Source Voltage Gate-Source Voltage www.DataSheet4U.com Value -20 ±12 ±5.4 ±4.3 ±32 -1.5 -55 to 150 -55 to 150 Units V Continuous Drain Current @ TJ = 150°C1 Pulsed Drain Current2 Continuous Source Current (Source-Drain Diode)1 Operating Junction Temperature Range Storage Temperature Range TA = 25°C TA = 70°C A °C °C Thermal Characteristics1 Symbol RθJA RθJA2 RθJF PD Description Junction-to-Ambient Steady State Junction-to-Ambient t<5 Seconds Junction-to-Foot Maximum Power Dissipation TA = 25°C TA = 70°C Typ 100 61 33 Max 120 73.5 40 1.7 1.0 Units °C/W °C/W °C/W W 1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with o...