Document
20V P-Channel Power MOSFET General Description
The AAT8401 is a low threshold MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech™’s ultra high density proprietary TrenchDMOS™ technology, this product demonstrates high power handling and small size.
AAT8401
Features
• • • VDS(MAX) = -20V ID(MAX) 1 = -2.4A @ 25°C Low RDS(ON): • 100 mΩ @ VGS = -4.5V • 175 mΩ @ VGS = -2.5V
Applications
• • • Battery Packs Cellular & Cordless Telephones Battery-powered portable equipment
SC59 Package
Top View
D 3
Preliminary Information
1 G
www.DataSheet4U.com
2 S
Absolute Maximum Ratings
Symbol
VDS VGS ID IDM IS PD TJ, TSTG
(TA=25°C unless otherwise noted) Value
-20 ±12 ±2.4 ±2.0 ±9 -0.9 1.0 0.6 -55 to 150
Description
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TJ=150°C
1
Units
V
TA = 25°C TA = 70°C
1
Pulsed Drain Current 2 Continuous Source Current (Source-Drain Diode) Maximum Power Dissipation
1
A
TA = 25°C TA = 70°C
W °C
Operating Junction and Storage Temperature Range
Thermal Characteristics
Symbol
RθJA RθJA2 RθJF
Description
Typical Junction-to-Ambient steady state 1 Maximum Junction-to-Ambient t<5 seconds Typical Junction-to-Foot 1
1
Value
145 125 50
Units
°C/W °C/W °C/W
8401.2003.06.0.61
1
20V P-Channel Power MOSFET Electrical Characteristics
Symbol Description (TJ=25°C unless otherwise noted) Conditions
VGS=0V, ID=-250µA VGS=-4.5V, ID=-2.4A VGS=-2.5V, ID=-1.8A VGS=-4.5V, VDS=-5V (Pulsed) VGS=VDS, ID=-250µA VGS=±12V, VDS=0V VGS=0V, VDS=-20V VGS=0V, VDS=-16V, TJ=70°C 3 VDS=-5V, ID=-2.4A VDS=-15V, VDS=-15V, VDS=-15V, VDS=-15V, VDS=-15V, VDS=-15V, VDS=-15V,
2
AAT8401
Min
-20
Typ
Max
Units
V
DC Characteristics BVDSS Drain-Source Breakdown Voltage RDS(ON) ID(ON) VGS(th) IGSS IDSS Drain-Source ON-Resistance On-State Drain Current 2 Gate Threshold Voltage Gate-Body Leakage Current Drain Source Leakage Current
2
88 146 -9 -0.6
100 175
mΩ A V nA µA S
±100 -1 -5 4 4 0.6 1.4 6.5 13 15 20 -1.3 -0.9
gfs Forward Transconductance 2 Dynamic Characteristics 3 QG Total Gate Charge QGS Gate-Source Charge QGD Gate-Drain Charge tD(ON) Turn-ON Delay tR Turn-ON Rise Time tD(OFF) Turn-OFF Delay tF Turn-OFF Fall Time Source-Drain Diode Characteristics VSD Source-Drain Forward Voltage IS Continuous Diode Current 1
RD=5.6Ω, RD=5.6Ω, RD=5.6Ω, RD=5.6Ω, RD=5.6Ω, RD=5.6Ω, RD=5.6Ω,
VGS=-4.5V VGS=-4.5V VGS=-4.5V VGS=-4.5V, VGS=-4.5V, VGS=-4.5V, VGS=-4.5V,
nC
RG=6Ω RG=6Ω RG=6Ω RG=6Ω
ns
VGS=0, IS=-2.4A
V A
Note 1: Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5 second pulse on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design, however RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design. Note 2: Pulse test: Pulse Width = 300 µs Note 3: Guaranteed by design. Not subject to production testing.
2
8401.2003.06.0.61
20V P-Channel Power MOSFET Typical Characteristics
Output Characteristics
9 8 7 6
AAT8401
Transfer Characteristics
3V 2.5V
ID (A)
9 8 7 6 5 4 3 2
5V 4.5V
4V 3.5V
VD = VG -55°C 125°C 25°C
IDS (A)
5 4 3 2 1 0 0 1 2 3
2V 1.5V
1 0 0 1 2 3 4 5
VDS (V)
VGS (V)
On-Resistance vs. Drain Current
300 250
On-Resistance vs. Gate to Source Voltage
300 250
ID = 2.7A
RDS(ON) (mΩ)
RDS(ON) (mΩ)
200 150 100 50 0 0
200 150 100 50 0
VGS = 2.5V
VGS = 4.5V
2
4
6
8
0
1
2
3
4
5
ID (A)
VGS (V)
On-Resistance vs. Junction Temperature
1.6
Threshold Voltage
0.4
Normalized RDS(ON)
VGS(th) Variance (V)
1.4 1.2 1.0 0.8 0.6 -50
VGS = 4.5V ID = 2.7A
0.3 0.2 0.1 0.0 -0.1 -0.2
ID = 250µA
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
TJ (°C)
TJ (°C)
8401.2003.06.0.61
3
20V P-Channel Power MOSFET Typical Characteristics
Gate Charge
5 4 3 2 1 0
0.1 0 0.2 0.4 0.6 0.8 1 1.2
AAT8401
Source-Drain Diode Forward Voltage
10
VD = 15V ID = 2.7A
TJ = 150°C IS (A)
1
VGS (V)
TJ = 25°C
0
1
2
3
4
5
QG, Charge (nC)
VSD (V)
Capacitance
750 600 450 300 150 0 0 -5 -10 -15 -20 30 25
Single Pulse Power, Junction to Ambient
Capacitance (pF)
Power (W)
Ciss
20 15 10 5 0 0.001
Crss
Coss
0.01
0.1
1
10
100
1000
VDS (V)
Time (s)
Transient Thermal Response, Junction to Ambient
Normalized Effective Transient Thermal Impedance
10
1
0.1
0.2
0.5
0.1
Single Pulse .05
0.01 0.0001 0.001
.02
0.01 0.1 1 10 100 1000
Time (s)
4
8401.2003.06.0.61
20V P-Channel Power MOSFET Ordering Information
Package SC59 Marking1 IGXYY Part Number (Tape and Reel) AAT8401IGY-T1
AAT8401
Note: Sample stock is generally held on all part numbers listed in BOLD. Note 1: XYY = assembly and date code.
Package Information
SC59
2.85 ± 0.15
1.575 ± 0.125
0.95 BSC 1.90 BSC
2.80 ± 0.20
0.075 ± 0.075
1.20 ± 0.30
.