AAT8343

AAT8343 20V P-Channel Power MOSFET General Description The AAT8343 is a low threshold P-channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech's ultra-high-density proprietary TrenchDMOS™ technology, this product demonstrates high power handling and small size. Features Drain-Source Voltage (max): -20V Continuous Drain Current1 (max): -4.5A @ 25°C Low On-Resistance: — 60mΩ @ VGS = -4.5V — 110mΩ @ VGS = -2.5V Applications Battery Packs Battery-Powered Portable Equipment Cellular and Cordless Telephones TSOP-6 Package Top View D 6 D 5 S 4 Absolute Maximum Ratings TA = 25°C, unless otherwise noted. Symbol VDS VGS ID IDM IS TJ TSTG 1 D 2 D 3 G Description Drain-Source Voltage Gate-Source Voltage www.DataSheet4U.com Value -20 ±12 ±4.5 ±3.6 ±16 -1.3 -55 to 150 -55 to 150 Units V Continuous Drain Current @ TJ = 150°C1 Pulsed Drain Current2 Continuous Source Current (Source-Drain Diode)1 Operating Junction Temperature Range Storage Temperature Range TA = 25°C TA = 70°C A °C °C Thermal Characteristics1 Symbol RθJA RθJA2 RθJF PD Description Junction-to-Ambient Steady State Junction-to-Ambient t<5 Seconds Junction-to-Foot Maximum Power Dissipation TA = 25°C TA = 70°C Typ 95 51 25 Max 115 62 30 2.0 1.3 Units °C/W °C/W °C/W W 1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a 1" x 1" PCB approximates testing a device mounted on a large multi-...