AAT8107

AAT8107 20V P-Channel Power MOSFET General Description The AAT8107 low threshold 20V, P-channel MOSFET is a member of AnalogicTech's TrenchDMOS product family. Using an ultra-high density proprietary TrenchDMOS technology, the AAT8107 is designed for use as a load switch in battery-powered applications and protection in battery packs. Features TrenchDMOS™ VDS(MAX) = -20V ID(MAX)1 = -6.5A @ 25°C Low RDS(ON): 35mΩ @ VGS = -4.5V 60mΩ @ VGS = -2.5V Applications Battery Packs Battery-Powered Portable Equipment SOP-8L Package Top View D 8 D 7 D 6 D 5 Absolute Maximum Ratings TA = 25°C, unless otherwise noted. www.DataSheet4U.com 1 S 2 S 3 S 4 G Symbol VDS VGS ID IDM IS PD TJ, TSTG Description Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TJ=150°C1 Pulsed Drain Current2 Continuous Source Current (Source-Drain Diode)1 Maximum Power Dissipation1 Operating Junction and Storage Temperature Range TA = 25°C TA = 70°C TA = 25°C TA = 70°C Value -20 ±12 ±6.5 ±5.2 ±32 -1.7 2.5 1.6 -55 to 150 Units V A W °C Thermal Characteristics Symbol RθJA RθJA2 RθJF Description Typical Junction-to-Ambient Steady State Maximum Junction-to-Ambient t<10 Seconds1 Typical Junction-to-Foot1 1 Value 80 50 27 Units °C/W 1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 10-second pulse on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF +...