MS1263

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1263 RF & MICROWAVE TRANSISTOR UHF MOBILE APPLICATIONS Features 512 MHz 12.5 VOLTS POUT = 15 W MINIMUM GP = 7.8 dB INPUT MATCHED COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1263 is a NPN silicon RF power transistor designed for 12.5-volt UHF amplifier applications operating to 512 MHz. The MS1263 has internal impedance matching for broadband operation and diffused emitter ballast for high load VSWR tolerance. www.DataSheet4U.com ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol VCBO VCEO VEBO IC PTOT T STG TJ Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Storage Temperature Junction Temperature Value 36 16 4.0 3.4 0 37.5 -65 to +150 +200 Unit V V V A W °C °C Thermal Data Rθ JC Thermal Resistance Junction-case 4.6 ° C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS1263 ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) STATIC Symbol BVCEO BVCES BVEBO ICES HFE IC = 50mA IC = 50mA IE = 5.0mA VCE = 15V VCE = 5.0V Test Conditions IB = 0 VBE = 0 IC = 0 VBE = 0 IC = 500mA Value Min. 16 36 4.0 --20 Typ. ----------- Max. ------5.0 120 Unit V V V mA --- DYNAMIC Symbol POUT GP ηc COB f = 512 MHz f = 512 MHz f = 512 MHz f = 1.0 MHz Test Condition...