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POWER TRANSISTOR. CSC2688 Datasheet

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POWER TRANSISTOR. CSC2688 Datasheet






CSC2688 TRANSISTOR. Datasheet pdf. Equivalent




CSC2688 TRANSISTOR. Datasheet pdf. Equivalent





Part

CSC2688

Description

NPN SILICON EPITAXIAL POWER TRANSISTOR



Feature


Continental Device India Limited An ISO/ TS 16949, ISO 9001 and ISO 14001 Certif ied Company NPN SILICON EPITAXIAL POWE R TRANSISTOR CSC2688 TO-126 EC B AB SOLUTE MAXIMUM RATINGS(Ta=25deg C) DESC RIPTION SYMBOL VALUE VCBO 300 Collector -Base Voltage VCEO 300 Collector -Emit ter Voltage VEBO 5 Emitter Base Voltage IC 200 Collector Current Continuous PC 1.25 Collector Po.
Manufacture

CDIL

Datasheet
Download CSC2688 Datasheet


CDIL CSC2688

CSC2688; wer Dissipation @ Ta=25 deg C PC 10 Coll ector Power Dissipation @ Tc=25 deg C T j 150 Junction Temperature Tstg -55 to +150 Storage Temperature Range ELECTRIC AL CHARACTERISTICS (Ta=25 deg C Unless Specified) DESCRIPTION SYMBOL TEST COND ITION www.DataSheet4U.com VCEO IC=5mA, IB=0 Collector Emitter Voltage VCBO IC= 0.1mA, IE=0 Collector Base Voltage VEBO IE=0.1mA,IC=0 Emi.


CDIL CSC2688

tter Base Voltage ICBO VCB=200V, IE=0 Co llector Cut off Current IEBO VEB=4V,IC= 0 Emitter Cut off Current VCE(Sat)* IC= 50mA,IB=5mA Collector Emitter Saturatio n Voltage hFE* IC=10mA, VCE=10V DC Curr ent Gain Dynamic Characteristics ft VCE =30V,IC=10mA, Transition Frequency Cre VCB=30V, IE=0 Feed Back Capacitance f=1 MHz *hFE Classification R: 40-80 O : 60 -120 Y :100-200 *P.


CDIL CSC2688

ULSE TEST:PW=350uS, Duty Cycle=2% UNIT V V V mA W W deg C deg C MIN 300 300 5 40 50 G :160-250 MAX 0.1 0.1 1.5 250 3 UNIT V V V uA uA V MHz pF Continental Device India Limited Data Sheet Page 1 of 2 TO-126 (SOT-32) Plastic Packag e C N P B 1 2 3 A D IM A B C D E F G L M N P S M IN . M AX . S D M F E G Packing Detail PACKAGE TO-126 STANDAR D PACK Details Net.

Part

CSC2688

Description

NPN SILICON EPITAXIAL POWER TRANSISTOR



Feature


Continental Device India Limited An ISO/ TS 16949, ISO 9001 and ISO 14001 Certif ied Company NPN SILICON EPITAXIAL POWE R TRANSISTOR CSC2688 TO-126 EC B AB SOLUTE MAXIMUM RATINGS(Ta=25deg C) DESC RIPTION SYMBOL VALUE VCBO 300 Collector -Base Voltage VCEO 300 Collector -Emit ter Voltage VEBO 5 Emitter Base Voltage IC 200 Collector Current Continuous PC 1.25 Collector Po.
Manufacture

CDIL

Datasheet
Download CSC2688 Datasheet




 CSC2688
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON EPITAXIAL POWER TRANSISTOR
CSC2688
TO-126
ECB
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
DESCRIPTION
SYMBOL
VALUE
Collector -Base Voltage
VCBO
300
Collector -Emitter Voltage
VCEO
300
Emitter Base Voltage
VEBO
5
Collector Current Continuous
IC
200
Collector Power Dissipation @ Ta=25 deg C PC
1.25
Collector Power Dissipation @ Tc=25 deg C PC
10
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter Voltage
VCEwOww.DataSheet4U.IcCom=5mA, IB=0
Collector Base Voltage
VCBO
IC=0.1mA, IE=0
Emitter Base Voltage
VEBO
IE=0.1mA,IC=0
Collector Cut off Current
ICBO
VCB=200V, IE=0
Emitter Cut off Current
IEBO
VEB=4V,IC=0
Collector Emitter Saturation Voltage
VCE(Sat)* IC=50mA,IB=5mA
DC Current Gain
hFE*
IC=10mA, VCE=10V
Dynamic Characteristics
Transition Frequency
ft VCE=30V,IC=10mA,
Feed Back Capacitance
Cre VCB=30V, IE=0
f=1MHz
*hFE Classification
R: 40-80
O : 60-120
Y :100-200
*PULSE TEST:PW=350uS, Duty Cycle=2%
MIN MAX
300 -
300 -
5-
- 0.1
- 0.1
- 1.5
40 250
50 -
-3
G :160-250
UNIT
V
V
V
mA
W
W
deg C
deg C
UNIT
V
V
V
uA
uA
V
MHz
pF
Continental Device India Limited
Data Sheet
Page 1 of 2




 CSC2688
TO-126 (SOT-32) Plastic Package
CA
N
P
S
1
2
3
D
M
F
E
G
B
1
2
3
PIN CONFIGURATION
1. EMITTER
2. COLLECTOR
3. BASE
L
DIM MIN. MAX.
A 7.4
7.8
B 10.5 10.8
C 2.4
2.7
D 0.7
0.9
E 2.25 TY P.
F 0.49 0.75
G 4.5 TY P.
L 15.7 TY P.
M 1.27 TY P.
N 3.75 TY P.
P 3.0
3.2
S 2.5 TY P.
Packing Detail
PACKAGE
STANDARD PACK
Details
Net Weight/Qty
TO-126
500 pcs/polybag 340 gm/500 pcs
INNER CARTON BOX
Size Qty
3" x 7.5" x 7.5"
2.0K
OUTER CARTON BOX
Size Qty Gr Wt
17" x 15" x 13.5"
32.0K 31 kgs
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web
Site/CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119
email@cdil.com www.cdilsemi.com
Continental Device India Limited
Data Sheet
Page 2 of 2







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