CMS-S072-060
SCHOTTKY BARRIER DIODE
Features :
* Extremely low forward volts * Guard ring protection * Low reverse leak...
CMS-S072-060
SCHOTTKY BARRIER DIODE
Features :
* Extremely low forward volts * Guard ring protection * Low reverse leakage current
Chip size(A):
1.830* 1.830 mm
2
Bond Pad size(B) :
1.702 *1.702 mm
2
A
Thickness : 300µm ± 20µm
Metalization :
Anode Ti/Ni/Ag
B
Metalization :
Cathode Ti/Ni/Ag
Electrical Characteristics
Sym.
Spec. Limit
Unit
Maximum Instantaneous Forward Volt ° at IF : 5.0Amp. 25 C
www.DataSheet4U.com
VF max
0.70
Volt
Minimum Instantaneous Reverse Voltage ° at IR : 300 uA 25 C
VR min.
63
Volt.
Minimum Non-repetitive Peak Surge current at 25 C
°
IFSM
120
Amp
Storage Temperature
TSTG
-65 to +125
°
C
HsinChu Headquarter
5F, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan TEL: +886-3-567 9979 FAX: +886-3-567 9909
Sales & Marketing
11F, No. 306-3, SEC. 1, Ta Tung Road, Hsichih, Taipei Hsien 221, Taiwan TEL: FAX: +886-2-8692 1591 +886-2-8692 1596
2002/04/24 Rev. 1
Champion Microelectronic Corporation
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