Document
AP30N30W
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ RoHS Compliant G S D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
250V 68mΩ 36A
Description
AP30N30 from APEC provide the designer with the best combination of fast switching , low on-resistance and cost-effectiveness . The TO-3P package is preferred for commercial & industrial applications with higher power level preclusion than TO-220 device. G D S
TO-3P
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Drain-Source Voltage Gate-Source Voltage
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Parameter
Rating 250 ±30 36 23 144 208 1.7
3
Units V V A A A W W/℃ mJ A ℃ ℃
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range
450 30 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 0.6 40 Units ℃/W ℃/W
Data and specifications subject to change without notice
200916052-1/4
AP30N30W
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
2
Test Conditions VGS=0V, ID=1mA
Min. 250 1.5 Min. -
Typ. 0.24 23 63 19 14 28 36 84 45 550 6 1.9 Typ. 235 2.24
Max. Units 68 3.5 10 100 ±1 100 3 V V/℃ mΩ V S uA uA uA nC nC nC ns ns ns ns pF pF pF Ω
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Symbol VSD trr Qrr
Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=150 C)
o o
VGS=10V, ID=15A VDS=VGS, ID=250uA VDS=10V, ID=15A VDS=250V, VGS=0V VDS=200V ,VGS=0V VGS= ±30V ID=15A VDS=200V VGS=10V VDS=125V ID=15A RG=10Ω,VGS=10V RD=8.3Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz Test Conditions IS=36A, VGS=0V IS=15A, VGS=0V dI/dt=100A/µs
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Parameter Forward On Voltage
2 2 2
4290 6900
Source-Drain Diode
Max. Units 1.5 V ns µC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. 3.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω , IAS=30A.
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AP30N30W
50 40
T C = 25 C
40
o
ID , Drain Current (A)
10V 7.0V 6.0V
T C = 150 o C
30
ID , Drain Current (A)
10V 7.0V 6.0V 5.0V
30
20
20
5.0V
V G =4. 5 V
10
10
V G =4. 5 V
0 0 2 4 6 8
0 0 2 4 6 8
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
160
2.8
I D =15A T C =25 C RDS(ON) (mΩ ) Normalized RDS(ON)
120
o
2.3
I D =15A V G =10V
1.8
1.3
80
0.8
40 2 4 6 8 10
0.3 -50 0 50 100 150
V GS Gate-to-Source Voltage (V)
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
2
15
12
IS(A)
9
Normalized VGS(th) (V)
1.2
1.5
T j =150 o C
6
1
T j =25 o C
0.5
3
0 0 0.2 0.4 0.6 0.8 1
0 -50 0 50 100 150
V SD , Source-to-Drain Voltage (V)
T j ,Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
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AP30N30W
f=1.0MHz
16 10000
I D = 15 A VGS , Gate to Source Voltage (V)
12
C iss
1000
V DS = 120 V V DS = 160 V V DS = 200 V C (pF)
C oss
8
100
4
10
C rss
0 0 20 40 60 80
1 1 5 9 13 17 21 25 29
Q G , Total Gate Charge (nC)
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (Rthjc)
Duty factor=0.5
100
0.2
ID (A)
100us
10
0.1
0.1
0.05
1
T c =25 C Single Pulse
0.1
o
1ms 10ms 100ms 1s DC
0.02
PDM
t
0.01
T
Duty factor = t/T Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
40
V DS =5V
30
VG
T j =25 o C T j =150 o C
QG 4.5V
ID , Drain Current (A)
20
QGS
QGD
10
Charge
0 0 2 4 6 8
Q
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
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