1.0 Ampere High Efficiency Glass Passivated Rectifier
EGF1A - EGF1D
EGF1A - EGF1D
Features • • •
Low forward voltage drop. Low profile package. Fast switching for high effic...
Description
EGF1A - EGF1D
EGF1A - EGF1D
Features
Low forward voltage drop. Low profile package. Fast switching for high efficiency.
3.93 3.73
0.181 (4.597) 0.157 (3.988) 0.062 (1.575) 0.055 (1.397)
2
1
0.114 (2.896) 0.098 (2.489)
0.208 (5.283) 0.188 (4.775)
1.67 1.47
+
2.38 2.18 5.49 5.29 Minimum Recommended Land Pattern
SMA/DO-214AC
COLOR BAND DENOTES CATHODE
0.096 (2.438) 0.078 (1.981)
0.060 (1.524) 0.030 (0.762)
0.008 (0.203) 0.002 (0.051)
0.012 (0.305) 0.006 (0.152)
1.0 Ampere High Efficiency Glass Passivated Rectifier
Absolute Maximum Ratings*
Symbol
IO if(surge)
TA = 25°C unless otherwise noted
Parameter
Average Rectified Current @ T L = 100°C Peak Forward Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient ** Thermal Resistance, Junction to Case ** Storage Temperature Range Operating Junction Temperature
Value
1.0
Units
A
30 2.0 13 85 30 -65 to +175 -65 to +175
A W mW/°C °C/W °C/W °C °C
PD RθJA RθJC Tstg TJ
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. **Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics
Parameter
TA = 25°C unless otherwise noted
Device
1A 1B 100 70 100 10 100 1.0 50 15 1C 150 105 150 1D 200 140 200 50 35 50
Units
V V V µA µA V ns pF
Peak Repetitive Reverse Voltage Maximum RMS Voltage DC Reverse Voltage (Rated VR) Maximum Reverse Current @ ra...
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