FCA20N60F

FCA20N60F — N-Channel SuperFET® FRFET® MOSFET FCA20N60F May 2014 N-Channel SuperFET® FRFET® MOSFET 600 V, 20 A, 190 mΩ Features Description 650 V @ TJ = 150°C Typ. RDS(on) = 150 mΩ Fast Recovery Type (Typ. Trr = 160 ns ) Ultra Low Gate Charge (Typ. Qg = 75 nC ) Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF ) 100% Avalanche Tested RoHS Compliant Applications LCD / LED / PDP TV Solar Inverter AC-DC Power Supply SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability. D G D S TO-3PN Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS ID IDM Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) VGSS EAS IAR EAR dv/dt PD Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak ...