FDA62N28 280V N-Channel MOSFET
UniFET
FDA62N28
280V N-Channel MOSFET Features
• 62A, 280V, RDS(on) = 0.051Ω @VGS = 10 V...
FDA62N28 280V N-Channel MOSFET
UniFET
FDA62N28
280V N-Channel MOSFET Features
62A, 280V, RDS(on) = 0.051Ω @VGS = 10 V Low gate charge ( typical 77 nC) Low Crss ( typical 83 pF) Fast switching 100% avalanche tested Improved dv/dt capability
TM
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
D
!
"
G!
! "
" "
TO-3P
G DS
FDA Series
www.DataSheet4U.com
!
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C
(Note 2) (Note 1) (Note 1) (Note 3)
Parameter
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
(Note 1)
FDA62N28
280 62 37 248 ±30 1919 62 50 4.5 500 4 -55 to +150 300
Unit
V A A A V mJ A mJ V/ns W W/°C °C °C
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC RθCS RθJA
Parameter
Therm...