FDB14N30

FDB14N30 — N-Channel UniFETTM MOSFET FDB14N30 N-Channel UniFETTM MOSFET 300 V, 14 A, 290 m Features RDS(on) = 290 m (Max.) @ VGS = 10 V, ID = 7 A Low Gate Charge (Typ. 18 nC) Low Crss (Typ.17 pF) 100% Avalanche Tested Improved dv/dt Capability Applications Lighting Uninterruptible Power Supply AC-DC Power Supply D November 2013 Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D G S D2-PAK G Absolute Maximum Ratings TC = 25oC unless otherwise noted. S Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) PD Power Dissipation (TC = 25C) - Derate above 25C TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RJC RJA Parameter Thermal Resistance, Junction to Case, M...