FDD4243

FDD4243 40V P-Channel PowerTrench® MOSFET FDD4243 40V P-Channel PowerTrench® MOSFET -40V, -14A, 44mΩ Features General Description „ Max rDS(on) = 44mΩ at VGS = -10V, ID = -6.7A „ Max rDS(on) = 64mΩ at VGS = -4.5V, ID = -5.5A „ High performance trench technology for extremely low rDS(on) „ RoHS Compliant November 2006 This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. Application „ Inverter „ Power Supplies S G S D www.DataSheet4U.com G D -PA K TO -2 52 (TO -252) D MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range TC= 25°C (Note 1a) (Note 3) TC= 25°C TC= 25°C TA= 25°C (Note 1) (Note 1a) Ratings -40 ±20 -14 -24 -6.7 -60 84 42 3 -55 to +150 mJ W °C A Units V V Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 3.0 40 °C/W Package Marking and Ordering Information Device Marking FDD4243 Device FDD4243 Package D-PAK(TO-252) Reel Size 13’’ Tape Width 12mm Quantity 2500 units ©2006 Fairchild Semiconductor Corporation FDD4243 Rev.C 1 ...