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FDD6N25 Dataheets PDF



Part Number FDD6N25
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDD6N25 DatasheetFDD6N25 Datasheet (PDF)

FDD6N25 — N-Channel UniFETTM MOSFET FDD6N25 N-Channel UniFETTM MOSFET 250 V, 4.4 A, 1.1 Ω Features • RDS(on) = 1.1 Ω (Max.) @ VGS = 10 V, ID = 2.2 A • Low Gate Charge (Typ. 4.5 nC) • Low Crss (Typ. 5 pF) • 100% Avalanche Tested Applications • LCD/LED/PDP TV • Consumer Appliances • Lighting • Uninterruptible Power Supply • AC-DC Power Supply May 2014 Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tai.

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FDD6N25 — N-Channel UniFETTM MOSFET FDD6N25 N-Channel UniFETTM MOSFET 250 V, 4.4 A, 1.1 Ω Features • RDS(on) = 1.1 Ω (Max.) @ VGS = 10 V, ID = 2.2 A • Low Gate Charge (Typ. 4.5 nC) • Low Crss (Typ. 5 pF) • 100% Avalanche Tested Applications • LCD/LED/PDP TV • Consumer Appliances • Lighting • Uninterruptible Power Supply • AC-DC Power Supply May 2014 Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D D G S D-PAK G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) PD Power Dissipation (TC = 25°C) - Derate Above 25°C TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds FDD6N25TM 250 4.4 2.6 18 ±30 45 4.4 5 4.5 50 0.4 -55 to +150 300 Unit V A A A V mJ A mJ V/ns W W/°C °C °C Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Junction-to-Ambient, Max. ©2007 Fairchild Semiconductor Corporation 1 FDD6N25 Rev. C2 FDD6N25TM 2.5 110 Unit °C/W www.fairchildsemi.com FDD6N25 — N-Channel UniFETTM MOSFET Package Marking and Ordering Information Part Number FDD6N25TM Top Mark FDD6N25 Package DPAK Packing Method Tape and Reel Reel Size 330 mm Tape Width 16 mm Quantity 2500 units Electrical Characteristics TC = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA 250 ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25°C -- IDSS Zero Gate Voltage Drain Current VDS = 250 V, VGS = 0 V -- VDS = 200 V, TC = 125°C -- IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA 3.0 RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 2.2 A -- gFS Forward Transconductance VDS = 40 V, ID = 2.2 A -- Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, -- Coss Output Capacitance f = 1 MHz -- Crss Reverse Transfer Capacitance -- Switching Characteristics td(on) tr Turn-On Delay Time Turn-On Rise Time VDD = 125 V, ID = 6 A, VGS = 10 V, RG = 25 Ω td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge VDS = 200 V, ID = 6 A, VGS = 10 V Qgd Gate-Drain Charge Drain-Source Diode Characteristics and Maximum Ratings -- -- -- (Note 4) -- -- -- (Note 4) -- IS Maximum Continuous Drain-Source Diode Forward Current -- ISM Maximum Pulsed Drain-Source Diode Forward Current -- VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 4.4 A -- trr Reverse Recovery Time VGS = 0 V, IS = 6 A, -- Qrr Reverse Recovery Charge dIF/dt =100 A/μs -- Typ. -0.25 ----- -0.9 5.5 194 38 5 10 25 7 12 4.5 1.5 1.8 ---145 0.55 Max --1 10 100 -100 5.0 1.1 -- 250 50 8 30 60 24 34 6 --- 4.4 18 1.4 --- Unit V V/°C μA μA nA nA V Ω S pF pF pF ns ns ns ns nC nC nC A A V ns μC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 3.7 mH, IAS = 4.4 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 4.4 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2007 Fairchild Semiconductor Corporation 2 FDD6N25 Rev. C2 www.fairchildsemi.com FDD6N25 — N-Channel UniFETTM MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics ID, Drain Current [A] Top : VGS 15.0 V 10.0 V 8.0 V 101 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 100 * Notes : 10-1 1. 250μs Pulse Test 2. TC = 25oC 10-1 100 101 VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage DS(ON) R [Ω], Drain-Source On-Resistance 6 5 4 VGS = 10V 3 2 VGS = 20V 1 * Note : TJ = 25oC 0 2 4 6 8 10 ID, Drain Current [A] Figure 5. Capacitance Characteristics 400 350 300 250 200 150 100 50 0 10-1 Coss Ciss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd * Note : Crss 1. VGS = 0 V 2. f = 1 MHz 100 101 VDS, Drain-Source Voltage [V] Capacit.


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