Document
FDD6N25 — N-Channel UniFETTM MOSFET
FDD6N25
N-Channel UniFETTM MOSFET
250 V, 4.4 A, 1.1 Ω
Features
• RDS(on) = 1.1 Ω (Max.) @ VGS = 10 V, ID = 2.2 A • Low Gate Charge (Typ. 4.5 nC) • Low Crss (Typ. 5 pF) • 100% Avalanche Tested
Applications
• LCD/LED/PDP TV • Consumer Appliances • Lighting • Uninterruptible Power Supply • AC-DC Power Supply
May 2014
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
D
D
G S
D-PAK
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS ID
IDM VGSS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2) (Note 1) (Note 1) (Note 3)
PD
Power Dissipation
(TC = 25°C)
- Derate Above 25°C
TJ, TSTG TL
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
FDD6N25TM
250
4.4 2.6 18 ±30 45 4.4 5 4.5 50 0.4 -55 to +150 300
Unit
V A A A V mJ A mJ V/ns W W/°C °C °C
Thermal Characteristics
Symbol
RθJC RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Junction-to-Ambient, Max.
©2007 Fairchild Semiconductor Corporation
1
FDD6N25 Rev. C2
FDD6N25TM
2.5 110
Unit
°C/W
www.fairchildsemi.com
FDD6N25 — N-Channel UniFETTM MOSFET
Package Marking and Ordering Information
Part Number FDD6N25TM
Top Mark FDD6N25
Package DPAK
Packing Method Tape and Reel
Reel Size 330 mm
Tape Width 16 mm
Quantity 2500 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 μA
250
ΔBVDSS / ΔTJ
Breakdown Voltage Temperature Coefficient
ID = 250 μA, Referenced to 25°C
--
IDSS
Zero Gate Voltage Drain Current
VDS = 250 V, VGS = 0 V
--
VDS = 200 V, TC = 125°C
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 μA
3.0
RDS(on)
Static Drain-Source On-Resistance
VGS = 10 V, ID = 2.2 A
--
gFS
Forward Transconductance
VDS = 40 V, ID = 2.2 A
--
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 25 V, VGS = 0 V,
--
Coss
Output Capacitance
f = 1 MHz
--
Crss
Reverse Transfer Capacitance
--
Switching Characteristics
td(on) tr
Turn-On Delay Time Turn-On Rise Time
VDD = 125 V, ID = 6 A, VGS = 10 V, RG = 25 Ω
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS = 200 V, ID = 6 A, VGS = 10 V
Qgd
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
--
--
--
(Note 4)
--
--
--
(Note 4)
--
IS
Maximum Continuous Drain-Source Diode Forward Current
--
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 4.4 A
--
trr
Reverse Recovery Time
VGS = 0 V, IS = 6 A,
--
Qrr
Reverse Recovery Charge
dIF/dt =100 A/μs
--
Typ.
-0.25
-----
-0.9 5.5
194 38 5
10 25 7 12 4.5 1.5 1.8
---145 0.55
Max
--1 10 100 -100
5.0 1.1 --
250 50 8
30 60 24 34 6 ---
4.4 18 1.4 ---
Unit
V V/°C μA μA nA nA
V
Ω S
pF pF pF
ns ns ns ns nC nC nC
A A V ns μC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 3.7 mH, IAS = 4.4 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 4.4 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics.
©2007 Fairchild Semiconductor Corporation
2
FDD6N25 Rev. C2
www.fairchildsemi.com
FDD6N25 — N-Channel UniFETTM MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
ID, Drain Current [A]
Top :
VGS 15.0 V
10.0 V
8.0 V
101
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
100
* Notes :
10-1
1. 250μs Pulse Test 2. TC = 25oC
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
DS(ON) R [Ω], Drain-Source On-Resistance
6
5
4
VGS = 10V 3
2 VGS = 20V
1 * Note : TJ = 25oC
0
2
4
6
8
10
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
400 350 300 250 200 150 100
50 0 10-1
Coss Ciss
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
* Note :
Crss
1. VGS = 0 V 2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Capacit.