Document
FDD6N50 / FDU6N50 — N-Channel UniFETTM MOSFET
FDD6N50 / FDU6N50
N-Channel UniFETTM MOSFET
500 V, 6 A, 900 mΩ
Features
• RDS(on) = 900 mΩ (Max.) @ VGS = 10 V, ID = 3 A • Low Gate Charge (Typ. 12.8 nC) • Low Crss (Typ. 9 pF) • 100% Avalanche Tested • Improved dv/dt Capability
Applications
• LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply
D
November 2013
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
D
G S
D-PAK
GDS
I-PAK
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG TL.