FDU6N50

FDD6N50 / FDU6N50 — N-Channel UniFETTM MOSFET FDD6N50 / FDU6N50 N-Channel UniFETTM MOSFET 500 V, 6 A, 900 mΩ Features RDS(on) = 900 mΩ (Max.) @ VGS = 10 V, ID = 3 A Low Gate Charge (Typ. 12.8 nC) Low Crss (Typ. 9 pF) 100% Avalanche Tested Improved dv/dt Capability Applications LCD/LED/PDP TV Lighting Uninterruptible Power Supply AC-DC Power Supply D November 2013 Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D G S D-PAK GDS I-PAK Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL...