FDD8750

FDD8750 N-Channel PowerTrench® MOSFET December 2006 FDD8750 N-Channel PowerTrench® MOSFET 25V, 2.7A, 40mΩ Features General Description This N-Channel MOSFET has been designed specifically to improve the overall effciency of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on) and fast switching speed. „ Max rDS(on) = 40mΩ at VGS = 10V, ID = 2.7A „ Max rDS(on) = 60mΩ at VGS = 4.5V, ID = 2.7A „ Low gate charge: Qg(10) = 6nC(Typ) „ Low gate resistance „ Avalanche rated and 100% tested „ RoHS Compliant tm Application „ Low current DC-DC switching „ Linear regulation D D www.DataSheet4U.com G S G D -PA K TO -2 52 (TO -252) S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous(Package Limited) -Continuous(Silicon Limited) -Continuous -Pulsed Drain-Source Avalanche Energy Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range TC= 25°C (Note 1a) (Note 3) TC= 25°C TC= 25°C TA= 25°C (Note 1) (Note 1a) Ratings 25 ±20 2.7 16 6.5 14 19 18 3.7 –55 to +175 mJ W °C A Units V V Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 8 40 °C/W Package Marking and Ordering Information Device Marking FDD8750 Device FDD8750 Package D-PAK(TO-252) Reel Size 13’’ Tape Width 12mm Quantity 2500...