FDFMA2P029Z

FDFMA2P029Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode December 2006 FDFMA2P029Z –20V, –3.1A, 95mΩ Features MOSFET Integrated P-Channel PowerTrench® MOSFET and Schottky Diode General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features a MOSFET with very low onstate resistance and an independently connected low forward voltage schottky diode allows for minimum conduction losses. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. „ Max rDS(on) = 95mΩ at VGS = –4.5V, ID = –3.1A „ Max rDS(on) = 141mΩ at VGS = –2.5V, ID = –2.5A Schottky „ VF < 0.37V @ 500mA „ Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm „ RoHS Compliant Pin 1 A NC D A 1 NC 2 D 3 MicroFET 2X2 C G S 6 C 5 G 4 S www.DataSheet4U.com MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG VRRM IO Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Operating and Storage Junction Temperature Range Schottky Repetitive Peak Reverse Voltage Schottky Average Forward Current (Note 1a) (Note 1b) (Note 1a) Ratings –20 ±12 –3.1 -6 1.4 0.7 –55 to +150 20 2 Units V V A W °C V A Thermal Characteristics RθJA RθJA RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Am...