Schottky Diode. FDFMA2P029Z Datasheet

FDFMA2P029Z Datasheet PDF, Equivalent


Part Number

FDFMA2P029Z

Description

Integrated P-Channel PowerTrench MOSFET and Schottky Diode

Manufacture

Fairchild Semiconductor

Total Page 8 Pages
PDF Download
Download FDFMA2P029Z Datasheet PDF


FDFMA2P029Z Datasheet
December 2006
FDFMA2P029Z
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
–20V, –3.1A, 95mΩ
Features
General Description
MOSFET
„ Max rDS(on) = 95mΩ at VGS = –4.5V, ID = –3.1A
„ Max rDS(on) = 141mΩ at VGS = –2.5V, ID = –2.5A
Schottky
„ VF < 0.37V @ 500mA
„ Low profile - 0.8 mm maximum - in the new package
MicroFET 2x2 mm
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other ultra-
portable applications. It features a MOSFET with very low on-
state resistance and an independently connected low forward
voltage schottky diode allows for minimum conduction losses.
The MicroFET 2X2 package offers exceptional thermal
performance for its physical size and is well suited to linear mode
applications.
„ RoHS Compliant
Pin 1
A NC D
A1
6C
www.DataSheet4U.com
NC 2
D3
5G
4S
MicroFET 2X2 C G S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation
Parameter
TJ, TSTG
VRRM
IO
Operating and Storage Junction Temperature Range
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
–20
±12
–3.1
-6
1.4
0.7
–55 to +150
20
2
Units
V
V
A
W
°C
V
A
RθJA
RθJA
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
86
173
86
140
°C/W
Device Marking
.P29
Device
FDFMA2P029Z
Package
MicroFET 2X2
Reel Size
7”
Tape Width
8mm
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
FDFMA2P029Z Rev.B
1
www.fairchildsemi.com

FDFMA2P029Z Datasheet
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = –250μA, VGS = 0V
ID = –250μA, referenced to 25°C
VDS = –16V, VGS = 0V
VGS = ±12V, VDS = 0V
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On-Resistance
gFS Forward Transconductance
VGS = VDS, ID = –250μA
ID = –250μA, referenced to 25°C
VGS = –4.5V, ID = –3.1A
VGS = –2.5V, ID = –2.5A
VGS = –4.5V, ID = –3.1A,TJ =125°C
VDS = –10V, ID = –3.1A
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = –10V, VGS = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = –10V, ID = –1A
VGS = –4.5V, RGEN = 6Ω
VDD = –10V, ID = –3.1A
VGS = –4.5V
Drain-Source Diode Characteristics
IS Maximum Continuous Drain-Source Diode Forward Current
VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = –1.1A (Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = –3.1A, di/dt = 100A/μs
Min
–20
–0.6
Typ
–12
–1.0
4
60
88
87
–11
540
120
100
13
11
37
36
7
1.1
2.4
–0.8
25
9
Max Units
V
mV/°C
–1 μA
±10 μA
–1.5 V
mV/°C
95
141 mΩ
140
S
720 pF
160 pF
150 pF
24 ns
20 ns
59 ns
58 ns
10 nC
nC
nC
–1.1 A
–1.2 V
ns
nC
Schottky Diode Characteristics
VR Reverse Voltage
IR Reverse Leakage
VF Forward Voltage
IR = 1mA
VR = 20V
IF = 500mA
IF = 1A
TJ = 25°C
20
V
TJ = 25°C
30 300 μA
TJ = 125°C
10 45 mA
TJ = 25°C
0.32 0.37
TJ = 125°C
TJ = 25°C
0.21 0.26
0.37 0.435
V
TJ = 125°C
0.28 0.33
FDFMA2P029Z Rev.B
2 www.fairchildsemi.com


Features Datasheet pdf FDFMA2P029Z Integrated P-Channel PowerTr ench® MOSFET and Schottky Diode Decem ber 2006 FDFMA2P029Z –20V, –3.1A, 95mΩ Features MOSFET Integrated P-Cha nnel PowerTrench® MOSFET and Schottky Diode General Description This device i s designed specifically as a single pac kage solution for the battery charge sw itch in cellular handset and other ultr aportable applications. It features a M OSFET with very low onstate resistance and an independently connected low forw ard voltage schottky diode allows for m inimum conduction losses. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and i s well suited to linear mode applicatio ns. „ Max rDS(on) = 95mΩ at VGS = 4.5V, ID = –3.1A „ Max rDS(on) = 14 1mΩ at VGS = –2.5V, ID = –2.5A Sc hottky „ VF < 0.37V @ 500mA „ Low pro file - 0.8 mm maximum - in the new pack age MicroFET 2x2 mm „ RoHS Compliant Pin 1 A NC D A 1 NC 2 D 3 MicroFET 2X2 C G S 6 C 5 G 4 S www.DataSheet4U.com MOSFET Maximum Ratings TA = 25°C unless other.
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