Schottky Diode. FDFMA2P857 Datasheet

FDFMA2P857 Datasheet PDF, Equivalent


Part Number

FDFMA2P857

Description

Integrated P-Channel PowerTrench MOSFET and Schottky Diode

Manufacture

Fairchild Semiconductor

Total Page 8 Pages
PDF Download
Download FDFMA2P857 Datasheet PDF


FDFMA2P857 Datasheet
February 2007
FDFMA2P857
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
20V, 3.0A, 120mΩ
Features
General Description
MOSFET:
„ Max rDS(on) = 120mΩ at VGS = –4.5V, ID = –3.0A
„ Max rDS(on) = 160mΩ at VGS = –2.5V, ID = –2.5A
„ Max rDS(on) = 240mΩ at VGS = –1.8V, ID = –1.0A
Schottky:
„ VF < 0.54V @ 1A
„ Low profile - 0.8 mm maximum - in the new pack-
age MicroFET 2x2 mm
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other ultra-
portable applications. It features a MOSFET with low on-state
resistance and an independently connected low forward voltage
schottky diode for minimum conduction losses.
The MicroFET 2x2 package offers exceptional thermal
performance for it’s physical size and is well suited to linear
mode applications.
„ RoHS Compliant
Pin 1
A NC D
A1
6C
www.DataSheet4U.com
NC 2
5G
D3 4S
MicroFET 2x2
CG S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGSS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Parameter
PD
TJ, TSTG
VRRM
IO
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
20
±8
–3
–6
1.4
0.7
–55 to +150
30
1
Units
V
V
A
W
°C
V
A
RθJA
RθJA
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
.857
Device
FDFMA2P857
Package
MicroFET 2x2
©2007 Fairchild Semiconductor Corporation
FDFMA2P857 Rev.B
1
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
86
173
86
140
°C/W
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
www.fairchildsemi.com

FDFMA2P857 Datasheet
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = –250μA, VGS = 0V
ID = –250μA, referenced to 25°C
VDS = –16V, VGS = 0V
VGS = ±8V, VDS = 0V
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = –250μA
ID = –250μA, referenced to 25°C
VGS = –4.5V, ID = –3.0A
VGS = –2.5V, ID = –2.5A
VGS = –1.8V, ID = –1.0A
VGS = –4.5V, ID = –3.0A, TJ = 125°C
VDS = –5V, ID = –3.0A
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = –10V, VGS = 0V,
f = 1.0MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = –10V, ID = –1A
VGS = –4.5V, RGEN = 6Ω
VDS = –10V ID = –3.0A
VGS = –4.5V
Drain-Source Diode Characteristics
IS Maximum Continuous Drain-Source Diode Forward Current
VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = –1.1A (Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = –3.0A, di/dt = 100A/μs
Schottky Diode Characteristics
IR Reverse Leakage
IR Reverse Leakage
VF Forward Voltage
VF Forward Voltage
VR = 10V
VR = 20V
IF = 100mA
IF = 1A
TJ = 25°C
TJ = 85°C
TJ = 125°C
TJ = 25°C
TJ = 85°C
TJ = 125°C
TJ = 25°C
TJ = 85°C
TJ = 125°C
TJ = 25°C
TJ = 85°C
TJ = 125°C
Min
–20
–0.4
FDFMA2P857 Rev.B
2
Typ
–12
–0.7
2
90
120
172
118
7
435
80
45
9
11
15
6
4
0.8
0.9
–0.8
17
6
0.5
0.05
0.6
1.1
0.09
0.9
0.37
0.29
0.23
0.5
0.46
0.43
Max Units
–1
±100
V
mV/°C
μA
nA
–1.3
120
160
240
160
V
mV/°C
mΩ
S
pF
pF
pF
18 ns
19 ns
27 ns
12 ns
6 nC
nC
nC
–1.1 A
–1.2 V
ns
nC
4.5 μA
1.0 mA
8.4 mA
8.0 μA
1.6 mA
10 mA
0.40 V
0.35 V
0.29 V
0.54 V
0.51 V
0.48 V
www.fairchildsemi.com


Features Datasheet pdf FDFMA2P857 Integrated P-Channel PowerTre nch® MOSFET and Schottky Diode Februa ry 2007 FDFMA2P857 Integrated P-Chann el PowerTrench® MOSFET and Schottky Di ode –20V, –3.0A, 120mΩ Features MO SFET: „ Max rDS(on) = 120mΩ at VGS = –4.5V, ID = –3.0A „ Max rDS(on) = 160mΩ at VGS = –2.5V, ID = –2.5A Max rDS(on) = 240mΩ at VGS = –1.8V , ID = –1.0A General Description Thi s device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It fe atures a MOSFET with low on-state resis tance and an independently connected lo w forward voltage schottky diode for mi nimum conduction losses. The MicroFET 2 x2 package offers exceptional thermal p erformance for it’s physical size and is well suited to linear mode applicat ions. Schottky: „ VF < 0.54V @ 1A „ Low profile - 0.8 mm maximum - in the n ew package MicroFET 2x2 mm „ RoHS Comp liant Pin 1 A NC D A 1 www.DataSheet4U.com 6 C 5 G 4 S NC 2 D 3 C MicroFET 2x2 G S MOS.
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