FDFS6N548 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
January 2007
FDFS6N548
30V, 7A, 23mΩ Features
I...
FDFS6N548 Integrated N-Channel PowerTrench® MOSFET and
Schottky Diode
January 2007
FDFS6N548
30V, 7A, 23mΩ Features
Integrated N-Channel PowerTrench® MOSFET and
Schottky Diode
General Description
The FDFS6N548 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop
Schottky barrier rectifier in an SO-8 package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected
Schottky diode allows its use in a variety of DC/DC converter topologies.
tm
Max rDS(on) = 23mΩ at VGS = 10V, ID = 7A Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 6A VF < 0.45V @ 2A VF < 0.28V @ 100mA
Schottky and MOSFET incorporated into single power surface mount SO-8 package Electrically independent
Schottky and MOSFET pinout for design flexibility Low Miller Charge
Application
DC/DC Conversion
D C C
D
www.DataSheet4U.com
A 1 A 2 S 3 G 4
8 C 7 C 6 D 5 D
SO-8
Pin 1
S A A
G
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDS VGS ID PD EAS VRRM IO TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation Drain-Source Avalanche Energy Schotty Repetitive Peak Reverse Voltage Schotty Average Forward Current Operating and Storage Junction Temperature Range...