Dual P-Channel PowerTrench MOSFET
FDMA1023PZ Dual P-Channel PowerTrench® MOSFET
March 2007
FDMA1023PZ
–20V, –3.7A, 72mΩ Features
Dual P-Channel PowerTr...
Description
FDMA1023PZ Dual P-Channel PowerTrench® MOSFET
March 2007
FDMA1023PZ
–20V, –3.7A, 72mΩ Features
Dual P-Channel PowerTrench® MOSFET
General Description
This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
Max rDS(on) = 72mΩ at VGS = –4.5V, ID = –3.7A Max rDS(on) = 95mΩ at VGS = –2.5V, ID = –3.2A Max rDS(on) = 130mΩ at VGS = –1.8V, ID = –2.0A Max rDS(on) = 195mΩ at VGS = –1.5V, ID = –1.0A Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm RoHS Compliant
Pin 1 S1 G1 D2 S1 D1 1 6 D1
D2
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G1
2
5 4
G2
D2 3 MicroFET 2X2 D1 G2 S2
S2
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) (Note 1a) Ratings –20 ±8 –3.7 –6 1.5 0.7 –55 to +150 Units V V A W °C
Thermal Characteristics
RθJA RθJA RθJA RθJA Thermal Resistance for Single Operation, Junction to Ambient Thermal Resistance for Single ...
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