Document
FDMA1025P Dual P-Channel PowerTrench® MOSFET
FDMA1025P Dual P-Channel PowerTrench® MOSFET
–20V, –3.1A, 155m:
Features
General Description
July 2014
Max rDS(on) = 155m: at VGS = –4.5V, ID = –3.1A Max rDS(on) = 220m: at VGS = –2.5V, ID = –2.3A Low profile - 0.8mm maximum - in the new package MicroFET
2X2 mm
RoHS Compliant
Free from halogenated compounds and antimony oxides
This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible.
The MicroFET 2X2 package offers exceptional thermal performance for its physical size and well suited to linear mode applications.
Application
DC - DC Conversion
PIN 1 S1 G1 D2
D1
D2
S1 1 G1 2
1
6
6 D1 5 G2
5
2
D1 G2 S2 MicroFET 2X2
D2 3
3
4
4 S2
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDS VGS ID
PD TJ, TSTG
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous
-Pulsed Power Dissipation for Single Operation Power Dissipation Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a) (Note 1b)
Ratings –20 ±12 –3.1 –6 1.4 0.7
–55 to +150
Units V V A
W °C
RTJA RTJA RTJA RTJA
Thermal Resistance Single Operation, Junction to Ambient Thermal Resistance Single Operation, Junction to Ambient Thermal Resistance Dual Operation, Junction to Ambient Thermal Resistance Dual Operation, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
86
(Note 1b)
173
(Note 1c)
69
(Note 1d)
151
°C/W
Device Marking 025
Device FDMA1025P
Package MicroFET 2X2
Reel Size 7’’
Tape Width 8mm
Quantity 3000 units
©2010 Fairchild Semiconductor Corporation
1
FDMA1025P Rev.B5
www.fairchildsemi.com
FDMA1025P Dual P-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS 'BVDSS 'TJ
IDSS
Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
ID = –250PA, VGS = 0V
–20
ID = –250PA, referenced to 25°C
VDS = –16V, VGS = 0V
TJ = 125°C
IGSS
Gate to Source Leakage Current
VGS = ±12V, VDS = 0V
On Characteristics
VGS(th) 'VGS(th) 'TJ
rDS(on)
gFS
Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient
Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = –250PA
–0.4
ID = –250PA, referenced to 25°C
VGS = –4.5V, ID = –3.1A VGS = –2.5V, ID = –2.3A VGS = –4.5V, ID = –3.1A,TJ = 125°C VDS = –5V, ID = –3.1A
Dynamic Characteristics
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
VDS = –10V, VGS = 0V, f = 1MHz
Switching Characteristics
td(on) tr td(off) tf Qg(TOT) Qgs Qgd
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge at 4.5V Gate to Source Gate Charge Gate to Drain “Miller” Charge
VDD = –10V, ID = –3.1A VGS = –4.5V, RGEN = 6:
VGS = 0V to –4.5V VDD = –10V ID = –3.1A
Drain-Source Diode Characteristics
IS
Maximum Continuous Source-Drain Diode Forward
VSD
Source to Drain Diode Forward Voltage VGS = 0V, IS = –1.1A (Note 2)
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = –3.1A, di/dt = 100A/Ps
Typ
14
–0.9 –3.8 88 144 121 6.2
340 80 45
5 14 13 8 3.4 0.8 1.0
–0.8 17 10
Max Units
V mV/°C –1
PA –100 ±100 nA
–1.5
V
mV/°C
155 220 m: 220
S
450 pF
105 pF
70
pF
10
ns
26
ns
24
ns
16
ns
4.8
nC
nC
nC
–1.1
A
–1.2
V
26
ns
15
nC
FDMA1025P Rev.B5
2
www.fairchildsemi.com
FDMA1025P Dual P-Channel PowerTrench® MOSFET
Notes:
1. RTJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTJA is determined by the user's board design.
(a) RTJA = 86 °C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For single operation. (b) RTJA = 173 °C/W when mounted on a minimum pad of 2 oz copper. For single operation. (c) RTJA = 69 oC/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB. For dual operation. (d) RTJA = 151 oC/W when mounted on a minimum pad of 2 oz copper. For dual operation.
a)86 oC/W when mounted on a 1 in2 pad of 2 oz copper.
b)173 oC/W when mounted on a minimum pad of 2 oz copper.
c)69 oC/W when mounted on a 1 in2 pad of 2 oz copper.
d)151 oC/W when mounted on a minimum pad of 2 oz copper.
2. Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0
FDMA1025P Rev.B5
4
www.fairchildsemi.com
FDMA1025P Dual P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise.