FDMA2002NZ

May 2006 May 2006 FDMA2002NZ Dual N-Channel PowerTrench® MOSFET FDMA2002NZ Dual N-Channel PowerTrench® MOSFET General Description This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 offers exceptional thermal performance for its physical size and is well suited to linear mode applications. Features 2.9 A, 30 V RDS(ON) = 123 mΩ @ VGS = 4.5 V RDS(ON) = 140 mΩ @ VGS = 3.0 V RDS(ON) = 163 mΩ @ VGS = 2.5 V Low profile – 0.8 mm maximum – in the new package MicroFET 2x2 mm RoHS Compliant PIN 1 S1 G1 D1 D2 D2 S1 G1 D2 1 2 3 6 5 4 D1 G2 S2 D1 G2 S2 www.DataSheet4U.com MicroFET 2x2 Absolute Maximum Ratings Symbol VDS VGS ID Drain-Source Voltage Gate-Source Voltage TA=25oC unless otherwise noted Parameter Ratings 30 ±12 2.9 2.7 10 (Note 1a) (Note 1b) Units V V A Drain Current – Continuous (TC = 25°C, VGS = 4.5V) – Continuous (TC = 25°C, VGS = 2.5V) – Pulsed PD TJ, TSTG Power Dissipation for Single Operation Power Dissipation for Single Operation Operating and Storage Temperature 1.5 0.65 –55 to +150 W °C Thermal Characteristics RθJA RθJA RθJA RθJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) (Note 1c) (N...